Mehdi Khan, Usman Khan, Z. Peng, A. Buzdar, A. Buzdar, Lei Li, F. Lin
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引用次数: 9
Abstract
A complete design of three-stage class A low-noise amplifier (LNA) operating in frequency range of 36 - 40 GHz using 0.15 μm metamorphic InGaAs HEMT technology is presented in this paper. The circuit is driven by a 1 V supply and the OIP3 dB achieved was 22 dBm with an input and output return loss of greater than 8 dB, gain of above 26 dB and noise figure below than 2.36 dB in the whole frequency range. The final layout occupies an area of 4.4 × 2 mm2.
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