Thermal annealing of AuPt Schottky contacts on GaAs and AlGaAs

Abstract

The thermal stability of AuPt Schottky contacts on n-GaAs and n-AlGaAs epitaxial layers is investigated. The thermal treatment has been carried out by RTA apparatus for 45 s up to 615/spl deg/C. The AuPt Schottky contacts on GaAs are found to remain thermally stable after annealing up to 520/spl deg/C, the optimal parameters have been obtained at 415/spl deg/C. The present example shows the possibility to use the Schottky contacts as MSM photodetectors with the sensitivity of 1.7 A/W. The AuPt metallization at the AlGaAs wafers has shown poor parameters.