Study of heavy metal contamination from dry etching process and its effects on subsequent wet processing

Abstract

Summary form only given. Dry etching process can cause a significant level of heavy metal contamination on process wafers, and the degree is dependent on the type of dry etcher. Most of these contaminants are removed through subsequent wet cleaning processes, but Cu seems to remain on the wafer surface. The effect of these contaminants on process wafers as well as chemical baths including filters will be discussed.