{"title":"HV ESD diodes investigation under vf-TLP stresses: TCAD approach","authors":"L. Di Biccari, L. Cerati, L. Zullino, A. Andreini","doi":"10.1109/EOSESD.2016.7592527","DOIUrl":null,"url":null,"abstract":"Very fast TLP stresses applied to HV ESD diodes in forward conduction are able to reproduce well known and CDM typical effects as Forward Recovery. In this work a full RLC vf-TLP model is introduced in order to investigate HV ESD diodes electrical and physical behavior using TCAD mixed-mode simulations.","PeriodicalId":239756,"journal":{"name":"2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EOSESD.2016.7592527","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
Very fast TLP stresses applied to HV ESD diodes in forward conduction are able to reproduce well known and CDM typical effects as Forward Recovery. In this work a full RLC vf-TLP model is introduced in order to investigate HV ESD diodes electrical and physical behavior using TCAD mixed-mode simulations.
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