{"title":"Application of the first-order bipolar model to harmonic distortion analysis of HBT's","authors":"B. Meskoob, S. Prasad","doi":"10.1109/CORNEL.1993.303093","DOIUrl":null,"url":null,"abstract":"Although large-signal models for GaAs MESFETs have been developed extensively, the same is not true for heterojunction bipolar transistors (HBT's). A first-order model, based on first-order device physics, is used for harmonic distortion analysis of an InGaAs/InAlAs/InP inverted HBT. It is shown that the first-order model is adequate at medium power levels and inadequate at higher power levels where the device is driven into hard saturation and cutoff.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"361 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1993.303093","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Although large-signal models for GaAs MESFETs have been developed extensively, the same is not true for heterojunction bipolar transistors (HBT's). A first-order model, based on first-order device physics, is used for harmonic distortion analysis of an InGaAs/InAlAs/InP inverted HBT. It is shown that the first-order model is adequate at medium power levels and inadequate at higher power levels where the device is driven into hard saturation and cutoff.<>
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