{"title":"Comparison of hot-carrier effects in deep submicron N- and P-channel partially- and fully-depleted Unibond and SIMOX MOSFETs","authors":"S. Renn, C. Raynaud, J. Pelloie, F. Balestra","doi":"10.1109/RELPHY.1998.670545","DOIUrl":null,"url":null,"abstract":"A thorough investigation on hot-carrier effects in deep submicron N- and P-channel SOI MOSFETs is reported in this paper. The following studies are presented in order to thoroughly assess the reliability of SOI technologies: (i) comparison of hot-carrier effects in SIMOX and Unibond MOSFETs; (ii) evaluation of the hot-carrier immunity of fully and partially depleted devices; (iii) analysis of the degradation in N- and P-channel transistors; and (iv) investigation of the aging/recovery mechanisms.","PeriodicalId":196556,"journal":{"name":"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.1998.670545","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
A thorough investigation on hot-carrier effects in deep submicron N- and P-channel SOI MOSFETs is reported in this paper. The following studies are presented in order to thoroughly assess the reliability of SOI technologies: (i) comparison of hot-carrier effects in SIMOX and Unibond MOSFETs; (ii) evaluation of the hot-carrier immunity of fully and partially depleted devices; (iii) analysis of the degradation in N- and P-channel transistors; and (iv) investigation of the aging/recovery mechanisms.
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