N. Babushkina, S. Malyshev, L.N. Bykova, L. Romanova
{"title":"Investigation of interface formation and charge properties of MIS structures Al-Dy/sub x/O/sub y/-n-InP(100)","authors":"N. Babushkina, S. Malyshev, L.N. Bykova, L. Romanova","doi":"10.1109/ASDAM.2000.889520","DOIUrl":null,"url":null,"abstract":"Al-Dy/sub x/O/sub y/-n-InP [100] structures with dysprosium oxide films Dy/sub x/O/sub y/ of 30 to 70 nm thickness have been studied. The influence of the film formation conditions on the Dy/sub x/O/sub y/-n-InP [100] interface charge properties are discussed. InP MIS structures with low effective charge density N/sub ss//spl sim/10/sup 11/ cm/sup -2/, interface trap density N/sub it//spl sim/3/spl middot/10/sup 11/ cm/sup -2/ eV/sup -1/ and capacitance-voltage characteristic hysteresis less than 0.3 V have been obtained. It is shown that DyP/sub x/O/sub y/ transition layer formation plays a predominant role in obtaining MIS structures with a very good compatible gate dielectric material for InP MISFET's.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2000.889520","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Al-Dy/sub x/O/sub y/-n-InP [100] structures with dysprosium oxide films Dy/sub x/O/sub y/ of 30 to 70 nm thickness have been studied. The influence of the film formation conditions on the Dy/sub x/O/sub y/-n-InP [100] interface charge properties are discussed. InP MIS structures with low effective charge density N/sub ss//spl sim/10/sup 11/ cm/sup -2/, interface trap density N/sub it//spl sim/3/spl middot/10/sup 11/ cm/sup -2/ eV/sup -1/ and capacitance-voltage characteristic hysteresis less than 0.3 V have been obtained. It is shown that DyP/sub x/O/sub y/ transition layer formation plays a predominant role in obtaining MIS structures with a very good compatible gate dielectric material for InP MISFET's.
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