M. G. Rubanovich, S. Matveev, V. Khrustalyov, V. Razinkin, M.J. Vasilchic
{"title":"Calculation of a High Frequency Rectangular Film Resistor Inductance","authors":"M. G. Rubanovich, S. Matveev, V. Khrustalyov, V. Razinkin, M.J. Vasilchic","doi":"10.1109/MEMIA.2005.247515","DOIUrl":null,"url":null,"abstract":"On the basis of decomposition and current strips methods the matrix method of calculation inductive and inter-inductive parameters of the equivalent circuit of high-power microwaves film resistors is submitted. To growth of frequency there is a redistribution of a current in cross section of the film resistor. As thus magnetic interaction between separate sites of cross section changes equivalent inductance of a resistive film also changes. In this work the algorithm of calculation of the equivalent inductance taking into account non-uniform distribution of currents is given. It is shown that at thickness of a film much less than skin layer and preservation of parameters of blocks on which the cross section is broken, equivalent inductance decreases on 5% in comparison with inductance on zero frequency.","PeriodicalId":197337,"journal":{"name":"2005 5th International Conference on Microwave Electronics: Measurement, Identification, Applications","volume":"404 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 5th International Conference on Microwave Electronics: Measurement, Identification, Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMIA.2005.247515","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
On the basis of decomposition and current strips methods the matrix method of calculation inductive and inter-inductive parameters of the equivalent circuit of high-power microwaves film resistors is submitted. To growth of frequency there is a redistribution of a current in cross section of the film resistor. As thus magnetic interaction between separate sites of cross section changes equivalent inductance of a resistive film also changes. In this work the algorithm of calculation of the equivalent inductance taking into account non-uniform distribution of currents is given. It is shown that at thickness of a film much less than skin layer and preservation of parameters of blocks on which the cross section is broken, equivalent inductance decreases on 5% in comparison with inductance on zero frequency.