Calculation of a High Frequency Rectangular Film Resistor Inductance

M. G. Rubanovich, S. Matveev, V. Khrustalyov, V. Razinkin, M.J. Vasilchic
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引用次数: 3

Abstract

On the basis of decomposition and current strips methods the matrix method of calculation inductive and inter-inductive parameters of the equivalent circuit of high-power microwaves film resistors is submitted. To growth of frequency there is a redistribution of a current in cross section of the film resistor. As thus magnetic interaction between separate sites of cross section changes equivalent inductance of a resistive film also changes. In this work the algorithm of calculation of the equivalent inductance taking into account non-uniform distribution of currents is given. It is shown that at thickness of a film much less than skin layer and preservation of parameters of blocks on which the cross section is broken, equivalent inductance decreases on 5% in comparison with inductance on zero frequency.
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高频矩形薄膜电阻器电感的计算
在分解法和电流条法的基础上,提出了计算大功率微波薄膜电阻器等效电路电感参数和间电感参数的矩阵法。为了增加频率,在薄膜电阻器的横截面上有电流的重新分布。因此,在横截面的不同位置之间的磁相互作用改变了,电阻膜的等效电感也改变了。本文给出了考虑电流非均匀分布的等效电感的计算算法。结果表明,在薄膜厚度远小于蒙皮层且截面破碎块的参数保持不变的情况下,等效电感比零频率下的等效电感减小5%。
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