{"title":"Simulative study on physical modelling of submicrometer highly-strained In0.8Ga0.2As/AlAs resonant tunnelling diode","authors":"W. M. Jubadi, M. A. Md Zawawi, M. Missous","doi":"10.1109/ASDAM.2014.6998671","DOIUrl":null,"url":null,"abstract":"This work presents a physical modelling for an in-house fabricated submicron InGaAs/AlAs double barrier Resonant Tunnelling diode (RTD). The modelling is developed in ATLAS SILVACO to extend the study of advanced III-V quantum devices. The Negative Differential Resistance (NDR) current and the peak-to-valley current ratio (PVCR) are simulated and validated with measurement data. The effects of structural parameters such as barrier width, spacer width, quantum well thickness and doping on current-voltage characteristics of RTD are investigated.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2014.6998671","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This work presents a physical modelling for an in-house fabricated submicron InGaAs/AlAs double barrier Resonant Tunnelling diode (RTD). The modelling is developed in ATLAS SILVACO to extend the study of advanced III-V quantum devices. The Negative Differential Resistance (NDR) current and the peak-to-valley current ratio (PVCR) are simulated and validated with measurement data. The effects of structural parameters such as barrier width, spacer width, quantum well thickness and doping on current-voltage characteristics of RTD are investigated.