Electrophoretic deposition of graphene growth in a nonconductive substrate

Abstract

In electrophoretic deposition, the quality of the deposition is closely related to both the electrolyte and electric field intensity. This study involved modifying the traditional electrophoresis setup and adjusting the variables of an experiment to deposit higher quality graphene a non-conductive silicon substrate. With a DC bias of 30 V and a 1 wt% Al2 (SO4)3 electrolytic solutions, the highest amount of graphene and the lowest number of graphene defects can be obtained. The defect ratio ID/IG is approximately 0.95.