Wide Band Gap Semiconductor Devices for Power Electronic Converters

Abstract

Wide Band Gap (WBG) semiconductors provide superior material qualities that could allow for the functioning of prospective power devices at higher temperatures, voltages, and switching rates than is now possible with Si technology. However, Si is reaching its limits, and as a result, Si-based semiconductors have restricted voltage blocking, limited heat transmission, limited efficiency, and limited maximum junction temperature. Wide-band gap materials like Silicon Carbide (SiC) and Gallium Nitride (GaN) have recently been used to construct power semiconductor devices. The development of new power converters and the significant improvement in the performance of current ones will be made possible using these new power semiconductor devices, resulting in an improvement in the efficiency of the electric energy transformations and more intelligent use of the electric energy. Due to their exceptional qualities, commercial availability of starting material, and maturity of their technological processes, SiC and GaN are now the more promising semiconductor materials for these new power devices. The introduction of these novel components in the converter has several ramifications that must be understood to fully profit from these devices. This study serves as a review that enumerates the traits and advancement of contemporary GaN and SiC power devices and assesses the condition of the research, and projects the future of semiconductor device applications. The issues and difficulties with GaN and SiC devices are also covered.