Pub Date : 2023-02-01DOI: 10.1109/3D-PEIM55914.2023.10052353
Milad Behnamfar, Md. Abu Taher, Alexis Polowsky, Sukanta Roy, Mohd Tariq, A. Sarwat
In this paper, the reliability analysis of wireless power transfer system for charging electric vehicles using Markov process is presented. Since wireless chargers of electric vehicles are supposed to be exposed to various weather conditions that affect the performance and aging of the system; therefore, reliability analysis of this type of system is required. The reliability analysis of wireless power transfer systems for charging electric vehicles is missing in the literature. Every wireless charger for electric vehicles is composed of five different sub-systems, including a full bridge single-phase inverter, a compensation network in both input and output sides, an inductive coil, and a rectifier. The five sub-systems are analyzed on individual reliability separately, to determine the overall system reliability. The result found have identified the system as highly reliable over twenty years of lifetime with having 66.31% percent availability.
{"title":"Reliability Analysis of Wireless Power Transfer for Electric Vehicle Charging based on Continuous Markov Process","authors":"Milad Behnamfar, Md. Abu Taher, Alexis Polowsky, Sukanta Roy, Mohd Tariq, A. Sarwat","doi":"10.1109/3D-PEIM55914.2023.10052353","DOIUrl":"https://doi.org/10.1109/3D-PEIM55914.2023.10052353","url":null,"abstract":"In this paper, the reliability analysis of wireless power transfer system for charging electric vehicles using Markov process is presented. Since wireless chargers of electric vehicles are supposed to be exposed to various weather conditions that affect the performance and aging of the system; therefore, reliability analysis of this type of system is required. The reliability analysis of wireless power transfer systems for charging electric vehicles is missing in the literature. Every wireless charger for electric vehicles is composed of five different sub-systems, including a full bridge single-phase inverter, a compensation network in both input and output sides, an inductive coil, and a rectifier. The five sub-systems are analyzed on individual reliability separately, to determine the overall system reliability. The result found have identified the system as highly reliable over twenty years of lifetime with having 66.31% percent availability.","PeriodicalId":106578,"journal":{"name":"2023 Fourth International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130492454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-02-01DOI: 10.1109/3D-PEIM55914.2023.10052239
Veeru Jaiswal, Pawan Gaire, S. Bhardwaj, A. Hassan, J. Volakis, P. Raj
Wireless power transmission is becoming a key technology in realizing future sensor nodes. Current approaches are based on inductive links or RF telemetry, both face limitations in achieving higher power densities. Multiferroic telemetry can address this challenge and provide a new approach for remote powering. This paper describes an integrated piezoelectric film on magnetostrictive carriers to achieve highly-efficient multiferroic functions. Various multi-layered architectures were investigated for output power performance. The multiferroic flexible stacks subsequently integrated with diode rectifier topologies and storage capacitors to generate the desired output. Results demonstrate new power telemetry opportunities with advanced material stacks with flex package integration.
{"title":"Low-Frequency Power Telemetry Using Multiferroic Laminate Heterostructures","authors":"Veeru Jaiswal, Pawan Gaire, S. Bhardwaj, A. Hassan, J. Volakis, P. Raj","doi":"10.1109/3D-PEIM55914.2023.10052239","DOIUrl":"https://doi.org/10.1109/3D-PEIM55914.2023.10052239","url":null,"abstract":"Wireless power transmission is becoming a key technology in realizing future sensor nodes. Current approaches are based on inductive links or RF telemetry, both face limitations in achieving higher power densities. Multiferroic telemetry can address this challenge and provide a new approach for remote powering. This paper describes an integrated piezoelectric film on magnetostrictive carriers to achieve highly-efficient multiferroic functions. Various multi-layered architectures were investigated for output power performance. The multiferroic flexible stacks subsequently integrated with diode rectifier topologies and storage capacitors to generate the desired output. Results demonstrate new power telemetry opportunities with advanced material stacks with flex package integration.","PeriodicalId":106578,"journal":{"name":"2023 Fourth International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126417637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-02-01DOI: 10.1109/3D-PEIM55914.2023.10052591
Ambreen Nisar, Ghaleb Al Duhni, Cheng Zhang, P. Raj, Arvind Agarwal
The performance and longevity of smart electrical gadgets are heavily dependent on heat dissipation and electromagnetic (EM) shielding capabilities, which must be solved. The reticulated architecture of Graphene foam (GrF) is adopted for developing advanced Cu matrix composites for EM shielding applications. A layered structure of Cu-decorated GrF interface with a thickness of up to 1 μm embedded in the Cu matrix was consolidated by spark plasma sintering (SPS). SPS has also shown the successful and seamless fabrication of graded porosity in Cu matrix with a multi-layered Cu decorated GrF interface. The improved shielding effectiveness (SE) up to the frequency of 250 MHz in Cu-GrF (40–120 dB) when compared to Cu (60 dB) is attributed to the intrinsic conductivity of GrF. The study suggests an effective method to design Gr-based composites with a layered structure suitable for high performance in flexible microwave identification devices.
{"title":"Reticular Graphene Reinforced Copper for Electromagnetic Shielding Application","authors":"Ambreen Nisar, Ghaleb Al Duhni, Cheng Zhang, P. Raj, Arvind Agarwal","doi":"10.1109/3D-PEIM55914.2023.10052591","DOIUrl":"https://doi.org/10.1109/3D-PEIM55914.2023.10052591","url":null,"abstract":"The performance and longevity of smart electrical gadgets are heavily dependent on heat dissipation and electromagnetic (EM) shielding capabilities, which must be solved. The reticulated architecture of Graphene foam (GrF) is adopted for developing advanced Cu matrix composites for EM shielding applications. A layered structure of Cu-decorated GrF interface with a thickness of up to 1 μm embedded in the Cu matrix was consolidated by spark plasma sintering (SPS). SPS has also shown the successful and seamless fabrication of graded porosity in Cu matrix with a multi-layered Cu decorated GrF interface. The improved shielding effectiveness (SE) up to the frequency of 250 MHz in Cu-GrF (40–120 dB) when compared to Cu (60 dB) is attributed to the intrinsic conductivity of GrF. The study suggests an effective method to design Gr-based composites with a layered structure suitable for high performance in flexible microwave identification devices.","PeriodicalId":106578,"journal":{"name":"2023 Fourth International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127410238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-02-01DOI: 10.1109/3D-PEIM55914.2023.10052630
Mian Liao, Daniel H. Zhou, P. Wang, Minjie Chen
The energy demand of future computing introduces new challenges in voltage regulator design. This paper explores an inductor-linked single-input multi-output hybrid switched-capacitor power architecture with modular output cells for 48-V to point-of-load (PoL) chiplet power delivery. The unique inductor-linked configuration of switched-capacitor circuits enables high performance with a high voltage conversion ratio while achieving high efficiency and high power density. The architecture can be used, for example, to support multiple loads in a chiplet with many voltage rails from a high voltage input.
{"title":"Power Systems on Chiplet: Inductor-Linked Multi-Output Switched-Capacitor Multi-Rail Power Delivery on Chiplets","authors":"Mian Liao, Daniel H. Zhou, P. Wang, Minjie Chen","doi":"10.1109/3D-PEIM55914.2023.10052630","DOIUrl":"https://doi.org/10.1109/3D-PEIM55914.2023.10052630","url":null,"abstract":"The energy demand of future computing introduces new challenges in voltage regulator design. This paper explores an inductor-linked single-input multi-output hybrid switched-capacitor power architecture with modular output cells for 48-V to point-of-load (PoL) chiplet power delivery. The unique inductor-linked configuration of switched-capacitor circuits enables high performance with a high voltage conversion ratio while achieving high efficiency and high power density. The architecture can be used, for example, to support multiple loads in a chiplet with many voltage rails from a high voltage input.","PeriodicalId":106578,"journal":{"name":"2023 Fourth International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM)","volume":"123 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115445389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-02-01DOI: 10.1109/3D-PEIM55914.2023.10052332
Reshmi Banerjee, A. Chowdhury, Pavar Sai Kumar, Chunlei Wang, S. Goel, P. Raj
Integrated power sources have a critical role in the operation of miniaturized, lightweight, wearable medical and IoT devices. Such power sources should be ideally grown directly on the package substrates for low-impedance power delivery and assembled in planar architectures while also achieving higher power densities. This paper shows laser-induced graphene supercapacitors on flexible packages to address that critical need. With the proper selection of laser wavelength and power, polyimide can be selectively transformed into porous graphene to form high surface area electrodes. These graphene layers are integrated with copper tape to a stainless-steel substrate to form planar supercapacitor layers. Initial testing was performed with liquid electrolytes. Capacitance densities of 1.2 mF/cm2, comparable to current porous graphene capacitors but with a simpler process, was thus achieved. This unique nanomanufacturing paradigm can broadly benefit all future power module integration strategies.
{"title":"Laser-induced graphene supercapacitors on flex substrates for package-integrated power supply","authors":"Reshmi Banerjee, A. Chowdhury, Pavar Sai Kumar, Chunlei Wang, S. Goel, P. Raj","doi":"10.1109/3D-PEIM55914.2023.10052332","DOIUrl":"https://doi.org/10.1109/3D-PEIM55914.2023.10052332","url":null,"abstract":"Integrated power sources have a critical role in the operation of miniaturized, lightweight, wearable medical and IoT devices. Such power sources should be ideally grown directly on the package substrates for low-impedance power delivery and assembled in planar architectures while also achieving higher power densities. This paper shows laser-induced graphene supercapacitors on flexible packages to address that critical need. With the proper selection of laser wavelength and power, polyimide can be selectively transformed into porous graphene to form high surface area electrodes. These graphene layers are integrated with copper tape to a stainless-steel substrate to form planar supercapacitor layers. Initial testing was performed with liquid electrolytes. Capacitance densities of 1.2 mF/cm2, comparable to current porous graphene capacitors but with a simpler process, was thus achieved. This unique nanomanufacturing paradigm can broadly benefit all future power module integration strategies.","PeriodicalId":106578,"journal":{"name":"2023 Fourth International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124666755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-02-01DOI: 10.1109/3D-PEIM55914.2023.10052206
Ian Byers, Stuart N. Wooters
This paper explains the technical challenges that come with miniaturization of inverter and converter technology and how Marel addresses these challenges through modularity, specialized manufacturing techniques, and a unique thermal management architecture. It will build upon silicon and silicon carbide die choice and die attach on substrate, and continue by explaining the thermal pathways and innovations surrounding the cooling system. It will also tie in Marel’s building block approach and show how the same blocks can be applied to liquid and air cooled system designs.
{"title":"Inverter/converter power density and flexibility improvements through modularity and novel thermal management architecture","authors":"Ian Byers, Stuart N. Wooters","doi":"10.1109/3D-PEIM55914.2023.10052206","DOIUrl":"https://doi.org/10.1109/3D-PEIM55914.2023.10052206","url":null,"abstract":"This paper explains the technical challenges that come with miniaturization of inverter and converter technology and how Marel addresses these challenges through modularity, specialized manufacturing techniques, and a unique thermal management architecture. It will build upon silicon and silicon carbide die choice and die attach on substrate, and continue by explaining the thermal pathways and innovations surrounding the cooling system. It will also tie in Marel’s building block approach and show how the same blocks can be applied to liquid and air cooled system designs.","PeriodicalId":106578,"journal":{"name":"2023 Fourth International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129916015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-02-01DOI: 10.1109/3D-PEIM55914.2023.10052608
Minjie Chen, Shuai Jiang, J. Cobos, Brad Lehman
The energy demand of future computing gives rise to new challenges in high current voltage regulator modules (VRMs). This paper reviews the recent development in architecture and magnetics for 48-V VRMs, with a focus on achieving high efficiency, high power density, high control bandwidth, and compact system packaging. The strengths and weaknesses of many representative solutions are compared. We highlight the key opportunities and challenges and present comprehensive co-design guidelines for 48-V VRM architecture and magnetics.
{"title":"Design Considerations for 48-V VRM: Architecture, Magnetics, and Performance Tradeoffs","authors":"Minjie Chen, Shuai Jiang, J. Cobos, Brad Lehman","doi":"10.1109/3D-PEIM55914.2023.10052608","DOIUrl":"https://doi.org/10.1109/3D-PEIM55914.2023.10052608","url":null,"abstract":"The energy demand of future computing gives rise to new challenges in high current voltage regulator modules (VRMs). This paper reviews the recent development in architecture and magnetics for 48-V VRMs, with a focus on achieving high efficiency, high power density, high control bandwidth, and compact system packaging. The strengths and weaknesses of many representative solutions are compared. We highlight the key opportunities and challenges and present comprehensive co-design guidelines for 48-V VRM architecture and magnetics.","PeriodicalId":106578,"journal":{"name":"2023 Fourth International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121876689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-02-01DOI: 10.1109/3D-PEIM55914.2023.10052586
S. M. S. H. Rafin, Roni Ahmed, O. Mohammed
Wide Band Gap (WBG) semiconductors provide superior material qualities that could allow for the functioning of prospective power devices at higher temperatures, voltages, and switching rates than is now possible with Si technology. However, Si is reaching its limits, and as a result, Si-based semiconductors have restricted voltage blocking, limited heat transmission, limited efficiency, and limited maximum junction temperature. Wide-band gap materials like Silicon Carbide (SiC) and Gallium Nitride (GaN) have recently been used to construct power semiconductor devices. The development of new power converters and the significant improvement in the performance of current ones will be made possible using these new power semiconductor devices, resulting in an improvement in the efficiency of the electric energy transformations and more intelligent use of the electric energy. Due to their exceptional qualities, commercial availability of starting material, and maturity of their technological processes, SiC and GaN are now the more promising semiconductor materials for these new power devices. The introduction of these novel components in the converter has several ramifications that must be understood to fully profit from these devices. This study serves as a review that enumerates the traits and advancement of contemporary GaN and SiC power devices and assesses the condition of the research, and projects the future of semiconductor device applications. The issues and difficulties with GaN and SiC devices are also covered.
{"title":"Wide Band Gap Semiconductor Devices for Power Electronic Converters","authors":"S. M. S. H. Rafin, Roni Ahmed, O. Mohammed","doi":"10.1109/3D-PEIM55914.2023.10052586","DOIUrl":"https://doi.org/10.1109/3D-PEIM55914.2023.10052586","url":null,"abstract":"Wide Band Gap (WBG) semiconductors provide superior material qualities that could allow for the functioning of prospective power devices at higher temperatures, voltages, and switching rates than is now possible with Si technology. However, Si is reaching its limits, and as a result, Si-based semiconductors have restricted voltage blocking, limited heat transmission, limited efficiency, and limited maximum junction temperature. Wide-band gap materials like Silicon Carbide (SiC) and Gallium Nitride (GaN) have recently been used to construct power semiconductor devices. The development of new power converters and the significant improvement in the performance of current ones will be made possible using these new power semiconductor devices, resulting in an improvement in the efficiency of the electric energy transformations and more intelligent use of the electric energy. Due to their exceptional qualities, commercial availability of starting material, and maturity of their technological processes, SiC and GaN are now the more promising semiconductor materials for these new power devices. The introduction of these novel components in the converter has several ramifications that must be understood to fully profit from these devices. This study serves as a review that enumerates the traits and advancement of contemporary GaN and SiC power devices and assesses the condition of the research, and projects the future of semiconductor device applications. The issues and difficulties with GaN and SiC devices are also covered.","PeriodicalId":106578,"journal":{"name":"2023 Fourth International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM)","volume":"385 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122842296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-02-01DOI: 10.1109/3D-PEIM55914.2023.10052323
Jorge A. Caripidis Troccola, Sweta Gupta, Maxence Carvalho, S. B. Venkatakrishnan, P. Raj, J. Volakis
A unique, multimodal 3D power packaging concept for simultaneous energy harvesting from RF, Solar, and TEG is proposed and demonstrated. The key innovations are five-fold: 1) 3D vertical stacking with substrate-embedding of RF and solar-TEG module assembly to achieve high power from TEG, while also reducing the overall module thickness. 2) High-gain linear antenna arrays for RF power harvesting. 3) Remateable clamped fuzz-button assembly from the module to the panel for easy removal and re-assembly by the operator, giving modularity and reparability to the stack. 4) Simultaneous 48 V and 1.5 V harvesting. By simultaneously harvesting multi-voltage domains, the power supply architecture can be simplified by selectively eliminating certain voltage converters. 5) Glass encasing for increased thermal gradient and output power. The 3D and embedded technology are scalable to both high power grid and low power wearable and IoT applications, integrated with other harvesting modes from RF, making it an innovative platform for power harvesting.
{"title":"Laminate-Embedded Multimodal Energy Harvester for Multilevel Power Supply","authors":"Jorge A. Caripidis Troccola, Sweta Gupta, Maxence Carvalho, S. B. Venkatakrishnan, P. Raj, J. Volakis","doi":"10.1109/3D-PEIM55914.2023.10052323","DOIUrl":"https://doi.org/10.1109/3D-PEIM55914.2023.10052323","url":null,"abstract":"A unique, multimodal 3D power packaging concept for simultaneous energy harvesting from RF, Solar, and TEG is proposed and demonstrated. The key innovations are five-fold: 1) 3D vertical stacking with substrate-embedding of RF and solar-TEG module assembly to achieve high power from TEG, while also reducing the overall module thickness. 2) High-gain linear antenna arrays for RF power harvesting. 3) Remateable clamped fuzz-button assembly from the module to the panel for easy removal and re-assembly by the operator, giving modularity and reparability to the stack. 4) Simultaneous 48 V and 1.5 V harvesting. By simultaneously harvesting multi-voltage domains, the power supply architecture can be simplified by selectively eliminating certain voltage converters. 5) Glass encasing for increased thermal gradient and output power. The 3D and embedded technology are scalable to both high power grid and low power wearable and IoT applications, integrated with other harvesting modes from RF, making it an innovative platform for power harvesting.","PeriodicalId":106578,"journal":{"name":"2023 Fourth International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM)","volume":"186 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116514389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
With the introduction of fast switching wide-bandgap (WBG) power semiconductors, the focus in the development of power modules has increasingly been shifted to reducing parasitic elements. To fully use the advantages of WBG power semiconductors, the relevant parasitic elements within the power modules must be minimized. Due to the limited degrees of freedom in the design, the parasitic elements in conventional power module structures can’t be further reduced. Consequently, new structures for power module designs and new solutions for the assembly and connection technology must be developed. Multi-layer, three-dimensional (3-D) structures are suggested for fast switching power semiconductors. Due to the 3-D structure new degrees of freedom in the module design can be used. This allows to reduce parasitic elements with new design and connection concepts. This paper presents design guidelines for 3-D power modules based on printed circuit boards (PCBs). By using PCB manufacturing technologies, a multi-layer, 3-D power module is developed. The proposed module structure does not require any bond wires in the power loop. To verify the advantages of the presented design, the module is assembled, measured, and compared with a simplified 3-D power module.
{"title":"New Design Concepts for PCB-Integration Technology in Power Electronics reducing Circuit Parasitics to a Minimum","authors":"Rando Raßmann, Jasper Schnack, Knud Gripp, Ulf Schümann","doi":"10.1109/3D-PEIM55914.2023.10052616","DOIUrl":"https://doi.org/10.1109/3D-PEIM55914.2023.10052616","url":null,"abstract":"With the introduction of fast switching wide-bandgap (WBG) power semiconductors, the focus in the development of power modules has increasingly been shifted to reducing parasitic elements. To fully use the advantages of WBG power semiconductors, the relevant parasitic elements within the power modules must be minimized. Due to the limited degrees of freedom in the design, the parasitic elements in conventional power module structures can’t be further reduced. Consequently, new structures for power module designs and new solutions for the assembly and connection technology must be developed. Multi-layer, three-dimensional (3-D) structures are suggested for fast switching power semiconductors. Due to the 3-D structure new degrees of freedom in the module design can be used. This allows to reduce parasitic elements with new design and connection concepts. This paper presents design guidelines for 3-D power modules based on printed circuit boards (PCBs). By using PCB manufacturing technologies, a multi-layer, 3-D power module is developed. The proposed module structure does not require any bond wires in the power loop. To verify the advantages of the presented design, the module is assembled, measured, and compared with a simplified 3-D power module.","PeriodicalId":106578,"journal":{"name":"2023 Fourth International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124647077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：