Surface Contamination Effects on Bonding Performance in Atomic Diffusion Bonding of Wafers using Amorphous Si Thin Films

T. Amino, M. Uomoto, T. Shimatsu
{"title":"Surface Contamination Effects on Bonding Performance in Atomic Diffusion Bonding of Wafers using Amorphous Si Thin Films","authors":"T. Amino, M. Uomoto, T. Shimatsu","doi":"10.1109/LTB-3D53950.2021.9598433","DOIUrl":null,"url":null,"abstract":"Room-temperature bonding using 20-nm thick amorphous Si films was studied as a function of waiting time t<inf>w</inf> in vacuum of 1.0 × 10<sup>−6</sup> Pa between film deposition and bonding. Bonding strength decreased suddenly at t<inf>w</inf> greater than 3.6 × 10<sup>3</sup> s, which differed from behavior observed using Ti films.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LTB-3D53950.2021.9598433","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Room-temperature bonding using 20-nm thick amorphous Si films was studied as a function of waiting time tw in vacuum of 1.0 × 10−6 Pa between film deposition and bonding. Bonding strength decreased suddenly at tw greater than 3.6 × 103 s, which differed from behavior observed using Ti films.
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非晶硅薄膜原子扩散键合中表面污染对键合性能的影响
研究了20 nm厚非晶硅薄膜的室温键合,研究了在真空1.0 × 10−6 Pa条件下薄膜沉积与键合之间等待时间tw的函数关系。在tw大于3.6 × 103 s时,结合强度突然下降,这与用Ti薄膜观察到的行为不同。
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