{"title":"Strained Si and the future direction of CMOS","authors":"S. Thompson","doi":"10.1109/IWSOC.2005.99","DOIUrl":null,"url":null,"abstract":"Uniaxial process induced strain is being adopted in all 90, 65, and 45 nm high performance logic technologies. Uniaxial strain offers large performance improvement at low cost and minimally increased manufacturing complexity and is scalable to future technology nodes.","PeriodicalId":328550,"journal":{"name":"Fifth International Workshop on System-on-Chip for Real-Time Applications (IWSOC'05)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Fifth International Workshop on System-on-Chip for Real-Time Applications (IWSOC'05)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWSOC.2005.99","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
Uniaxial process induced strain is being adopted in all 90, 65, and 45 nm high performance logic technologies. Uniaxial strain offers large performance improvement at low cost and minimally increased manufacturing complexity and is scalable to future technology nodes.
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