Performance enhancement by introducing different chlorinated salts in the SnO2 electron transfer layer of perovskite solar cells

Apoorva Singh, Bidisha Nath, A. Panchal, Praveen C Ramamurthy
{"title":"Performance enhancement by introducing different chlorinated salts in the SnO2 electron transfer layer of perovskite solar cells","authors":"Apoorva Singh, Bidisha Nath, A. Panchal, Praveen C Ramamurthy","doi":"10.1109/ICEE56203.2022.10117977","DOIUrl":null,"url":null,"abstract":"Tin oxide (SnO2) is one of the important and commonly used electron transfer layers (ETLs) in the planar structure of perovskite solar cells (PSCs). Doping the SnO2 layer with chlorinated salts such as potassium chloride (KCl) has been reported to improve the power conversion efficiency (PCE), intriguing further exploration of other chlorinated salts. Herein, the results from various chlorinated salts in addition to KCl are evaluated. It was observed, that though the PSCs with KCl doped SnO2 layer yield the best PCE (~17%), the ETL layer doped with other chlorinated salts such as sodium chloride (NaCl) and Iron chloride (FeCl3) also showed improvement in performance from the pristine SnO2 (~15 %). Moreover, the results from the SnO2-NaCl-based devices are found to be comparable to the SnO2-KCl. Performance enhancement is attributed to the passivation of defects in the interface and reduction in the non-radiative recombination losses. The established trend is supported by the current-voltage (J-V) and photoluminescence (PL) studies.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"45 13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEE56203.2022.10117977","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Tin oxide (SnO2) is one of the important and commonly used electron transfer layers (ETLs) in the planar structure of perovskite solar cells (PSCs). Doping the SnO2 layer with chlorinated salts such as potassium chloride (KCl) has been reported to improve the power conversion efficiency (PCE), intriguing further exploration of other chlorinated salts. Herein, the results from various chlorinated salts in addition to KCl are evaluated. It was observed, that though the PSCs with KCl doped SnO2 layer yield the best PCE (~17%), the ETL layer doped with other chlorinated salts such as sodium chloride (NaCl) and Iron chloride (FeCl3) also showed improvement in performance from the pristine SnO2 (~15 %). Moreover, the results from the SnO2-NaCl-based devices are found to be comparable to the SnO2-KCl. Performance enhancement is attributed to the passivation of defects in the interface and reduction in the non-radiative recombination losses. The established trend is supported by the current-voltage (J-V) and photoluminescence (PL) studies.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
在钙钛矿太阳能电池SnO2电子传递层中引入不同氯化盐提高电池性能
氧化锡(SnO2)是钙钛矿太阳能电池(PSCs)平面结构中重要且常用的电子转移层之一。在SnO2层中掺杂氯化钾(KCl)等氯化盐可以提高功率转换效率(PCE),这是对其他氯化盐的进一步探索。本文对除氯化钾外的各种氯化盐的结果进行了评价。结果表明,掺杂氯化钠(NaCl)和氯化铁(FeCl3)等其他氯化盐的ETL层的PCE比未掺杂的SnO2的PCE提高了约15%,而掺杂氯化钠(NaCl)和氯化铁(FeCl3)等氯化盐的ETL层的PCE达到了最高。此外,发现基于sno2 - nacl的器件的结果与SnO2-KCl相当。性能的提高是由于界面缺陷的钝化和非辐射复合损耗的减少。电流-电压(J-V)和光致发光(PL)的研究支持了这一既定趋势。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Organic Dye Based Longer Wavelength Photodetector for Narrowband Application Numerical Simulation and Parameter Extraction of Pure Thermionic Emission Across Schottky Contacts Inkjet-printed mesoporous indium oxide-based near-vertical transport thin film transistors and pseudo-CMOS inverters Flash imaging for microfluidics Fabrication and optimization of T -gate for high performance HEMT and MMIC devices
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1