A 0.3 V −190.2 dBc/Hz FoM 14-GHz Band LC-VCO IC with Harmonic Tuned LC Tank in 56-nm SOI CMOS

Xiao Xu, T. Sugiura, T. Yoshimasu
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引用次数: 5

Abstract

This paper presents a 14-GHz band ultra-low-power low-phase-noise VCO IC with a novel harmonic tuned LC tank consisting of a conventional LC tank and additional series inductors. The additional inductor is connected between the drain of the cross-coupled pMOSFET and the conventional LC tank circuit to adjust the harmonic impedance and to shape the drain voltage waveform rectangular. The adjusted load impedance improves the phase noise of the VCO IC. The conventional and proposed VCOs are designed, fabricated and fully measured on-wafer in 56-nm SOI CMOS technology. The fabricated VCO IC has exhibited a measured phase-noise of − 125.7 dBc/Hz at 10 MHz offset from the 13.46 GHz carrier frequency at a supply voltage of only 0.3 V. The power consumption of the VCO IC core is 0.63 mW and the FoM is − 190.2 dBc/Hz.
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带谐波调谐LC槽的FoM 14ghz LC- vco集成电路,采用56nm SOI CMOS
提出了一种14ghz频段超低功耗低相位噪声压控集成电路,该电路采用一种新型谐波调谐LC槽,由传统LC槽和附加的串联电感组成。附加电感连接在交叉耦合pMOSFET的漏极和传统LC槽电路之间,以调节谐波阻抗并使漏极电压波形呈矩形。采用56纳米SOI CMOS技术设计、制造了传统的和所提出的VCO芯片,并对其进行了完整的片上测量。所制备的VCO集成电路在电源电压仅为0.3 V时,在13.46 GHz载波频率的10 MHz偏移处显示出- 125.7 dBc/Hz的相位噪声。VCO芯线功耗为0.63 mW, FoM为−190.2 dBc/Hz。
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