RF power amplifiers-classes A through F

N. Sokal
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Abstract

With at least ten lettered classes of RF power amplifiers, and several combinations of those classes, it is not surprising that many RF engineers are confused about power amplifiers. The complexity of the subject is compounded by the fact that the RF power transistor acts either as a high-resistance current source or as a low-resistance switch, or-in some amplifiers-as a high-resistance current source during part of the "on" interval and as a low-resistance switch during another part of the "on" interval ("mixed-mode" operation). Inspection of the circuit topology is not sufficient to define unambiguously the transistor operating mode or the amplifier class of operation (examples are given of the same circuit topology operating as a Class B, C, or E amplifier, depending on how the transistor is biased and driven, and on the specific L-R-C values in the load network).
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射频功率放大器- A到F类
射频功率放大器至少有十个字母类别,以及这些类别的几种组合,因此许多射频工程师对功率放大器感到困惑并不奇怪。射频功率晶体管既可以作为高阻电流源,也可以作为低阻开关,或者在某些放大器中,在部分“导通”间隔期间作为高阻电流源,在另一部分“导通”间隔期间作为低阻开关(“混合模式”操作),这一事实使问题更加复杂。对电路拓扑的检查不足以明确定义晶体管的工作模式或放大器的工作类别(根据晶体管的偏置和驱动方式以及负载网络中特定的L-R-C值,给出了作为B类,C类或E类放大器的相同电路拓扑的示例)。
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