P. Güell‐Grau, M. Asbahi, S. Smout, M. Willegems, B. K. Kotowska, M. Traub, S. Lenci, E. Storace, S. Severi
{"title":"High transfer fidelity via nanoimprint lithography of patterns for bioelectronics applications","authors":"P. Güell‐Grau, M. Asbahi, S. Smout, M. Willegems, B. K. Kotowska, M. Traub, S. Lenci, E. Storace, S. Severi","doi":"10.1117/12.2657991","DOIUrl":null,"url":null,"abstract":"Precise control on nanoscale pattern manufacturing is key to enable new-generation devices in numerous fields, such as bioelectronics or optics, among others. However, to meet the requirements of the industry, it is especially relevant to increase throughput and reduce processing costs. In this regard, Nano-Imprint Lithography (NIL) is an ideal candidate for manufacturing large volumes of devices with low cost-of-ownership, by replicating small features from high-quality masters. However, NIL faces some challenges, such as limited pattern transfer fidelity in large-area processing. Here, we show our NIL processing capabilities, in terms of both yield and transfer fidelity from original DUV manufactured masters, including features from few hundred to tens of nanometers. We present an exhaustive study on the pattern evolution through the complete process, including design, master fabrication, NIL and subsequent pattern transfer via etching. This study demonstrates the inclusion of NIL into our foundry-mature, CMOS-compatible process modules as well as the pattern evolution characterization that enable technology-aware modelling and designing.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Lithography","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2657991","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Precise control on nanoscale pattern manufacturing is key to enable new-generation devices in numerous fields, such as bioelectronics or optics, among others. However, to meet the requirements of the industry, it is especially relevant to increase throughput and reduce processing costs. In this regard, Nano-Imprint Lithography (NIL) is an ideal candidate for manufacturing large volumes of devices with low cost-of-ownership, by replicating small features from high-quality masters. However, NIL faces some challenges, such as limited pattern transfer fidelity in large-area processing. Here, we show our NIL processing capabilities, in terms of both yield and transfer fidelity from original DUV manufactured masters, including features from few hundred to tens of nanometers. We present an exhaustive study on the pattern evolution through the complete process, including design, master fabrication, NIL and subsequent pattern transfer via etching. This study demonstrates the inclusion of NIL into our foundry-mature, CMOS-compatible process modules as well as the pattern evolution characterization that enable technology-aware modelling and designing.