Thermoelectric properties of Quantum Dot-based devices

Abstract

By means of advanced numerical simulation, the thermoelectric properties of a Si-quantum dot-based single-electron transistor working in sequential regime are investigated using our homemade simulator that self-consistently couples the 3D Poisson, Schrödinger and Master equations. At high voltage bias, the multi-level effects are shown to induce non-linear characteristics of the heat current. Additionally, the single-electron transistor operating in generator regime is shown to exhibit very good efficiency at maximum power.