Pub Date : 2018-07-23DOI: 10.1109/NANO.2018.8626223
M. Sousa, S. Mauthe, B. Mayer, S. Wirths, H. Schmid, K. Moselund
Due to their high mobility and direct band gap, III-V materials promise good prospects of obtaining novel, high-performance devices for electronic and photonic applications. In this paper, two variants of the established Template Assisted Selective Epitaxy (TASE) technique [2]–[4] are explored to study the structural quality of GaAs and InGaAs microcavities monolithically integrated on Si (001). The first variant involves a one-step direct cavity growth (DCG), while the second relies on a two-step virtual substrate (VS) growth approach. The cavities obtained were investigated by Scanning Transmission Electron Microscopy (STEM) and Energy Dispersive X-Ray Spectroscopy (EDX); the findings have been correlated with the photoluminescence properties of the cavities. Both approaches enable monolithic integration of GaAs crystalline material in predefined oxide microcavities. In some cases, they allow the III-V materials to be grown as a single gain and do not lead to noticeable structural defects. InGaAs disks and ring cavities grown using the VS approach have also been investigated. Despite the presence of planar defects and rough surfaces, lasing could be achieved at low temperature.
{"title":"Monolithic Integration of III-V on Si Applied to Lasing Micro-Cavities: Insights from STEM and EDX","authors":"M. Sousa, S. Mauthe, B. Mayer, S. Wirths, H. Schmid, K. Moselund","doi":"10.1109/NANO.2018.8626223","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626223","url":null,"abstract":"Due to their high mobility and direct band gap, III-V materials promise good prospects of obtaining novel, high-performance devices for electronic and photonic applications. In this paper, two variants of the established Template Assisted Selective Epitaxy (TASE) technique [2]–[4] are explored to study the structural quality of GaAs and InGaAs microcavities monolithically integrated on Si (001). The first variant involves a one-step direct cavity growth (DCG), while the second relies on a two-step virtual substrate (VS) growth approach. The cavities obtained were investigated by Scanning Transmission Electron Microscopy (STEM) and Energy Dispersive X-Ray Spectroscopy (EDX); the findings have been correlated with the photoluminescence properties of the cavities. Both approaches enable monolithic integration of GaAs crystalline material in predefined oxide microcavities. In some cases, they allow the III-V materials to be grown as a single gain and do not lead to noticeable structural defects. InGaAs disks and ring cavities grown using the VS approach have also been investigated. Despite the presence of planar defects and rough surfaces, lasing could be achieved at low temperature.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115949468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626367
M. Escudero, I. Vourkas, A. Rubio, F. Molll
Ever since the advent of the first TiO2-based memristor and the respective linear model published by Hewlett-Packard Labs, several behavioral models of memristors have been published. Such models capture the fundamental characteristics of resistive switching behavior through simple equations and rules, so they received a lot of attention and contributed significantly to the fast progress of research in this new and emerging device technology field. However, while this technology is maturing, accurate physics-based models are being developed, which go deeper into the device dynamics and capture more details than what just would be the fundamentals: i.e. parasitics of the device structure, variability of threshold voltages and resistance states, temperature dependency, dynamic current fluctuations, etc. In this work we build upon such a physics-based model of a bipolar metal-oxide resistive RAM device, showing how to take into account device variability and its significance in evaluation of processing circuits. With the Cadence Virtuoso suite, we focus on a family of memristive logic gate implementations showing that read & write errors can emerge due to both variability and state-drift impact, features rarely seen so far in results shown in other relevant published works.
{"title":"On the Variability-aware Design of Memristor-based Logic Circuits","authors":"M. Escudero, I. Vourkas, A. Rubio, F. Molll","doi":"10.1109/NANO.2018.8626367","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626367","url":null,"abstract":"Ever since the advent of the first TiO2-based memristor and the respective linear model published by Hewlett-Packard Labs, several behavioral models of memristors have been published. Such models capture the fundamental characteristics of resistive switching behavior through simple equations and rules, so they received a lot of attention and contributed significantly to the fast progress of research in this new and emerging device technology field. However, while this technology is maturing, accurate physics-based models are being developed, which go deeper into the device dynamics and capture more details than what just would be the fundamentals: i.e. parasitics of the device structure, variability of threshold voltages and resistance states, temperature dependency, dynamic current fluctuations, etc. In this work we build upon such a physics-based model of a bipolar metal-oxide resistive RAM device, showing how to take into account device variability and its significance in evaluation of processing circuits. With the Cadence Virtuoso suite, we focus on a family of memristive logic gate implementations showing that read & write errors can emerge due to both variability and state-drift impact, features rarely seen so far in results shown in other relevant published works.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116773610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626228
Ajay kumar Agrawal, Abhijit Das, A. Dhawan
We present a 2-dimensional gold nanopillar array, consisting of narrow gaps between the nanopillars, for application in the area of biosensing. Normally incident light can couple directly into plasmonic waveguide modes in these 2-dimensional plasmonic nano-gratings formed by the 2-dimensional array of gold nanopillars. The effect of polarization of the incident light and of the dimensions of the nanopillars on the sensitivity of localized sensing was studied using Rigorous Coupled-Wave Analysis. The results show that the sensitivity of biosensors made from these nanopillar arrays is not polarization dependent. Moreover, varying the structural parameters of the nanopillar array can enable tuning of wavelengths at which biosensing can be carried out.
{"title":"Enhanced sensitivity of SPR sensing and imaging using plasmonic nanopillar arrays","authors":"Ajay kumar Agrawal, Abhijit Das, A. Dhawan","doi":"10.1109/NANO.2018.8626228","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626228","url":null,"abstract":"We present a 2-dimensional gold nanopillar array, consisting of narrow gaps between the nanopillars, for application in the area of biosensing. Normally incident light can couple directly into plasmonic waveguide modes in these 2-dimensional plasmonic nano-gratings formed by the 2-dimensional array of gold nanopillars. The effect of polarization of the incident light and of the dimensions of the nanopillars on the sensitivity of localized sensing was studied using Rigorous Coupled-Wave Analysis. The results show that the sensitivity of biosensors made from these nanopillar arrays is not polarization dependent. Moreover, varying the structural parameters of the nanopillar array can enable tuning of wavelengths at which biosensing can be carried out.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"55 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120931128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626226
Amitesh Kumar, Mangal Das, Biswajit Mandal, R. Bhardwaj, Aaryashree, A. Kranti, S. Mukherjee
This work reports forming-free (FF) resistive switching (RS) with high endurance and retention for ZnO based thin films fabricated by dual ion beam sputtering (DIBS). Undoped and Ga-doped ZnO thin films have been used to compare the effect of doping upon RS behavior.
{"title":"Nano-Scaled ZnO Based RRAM with Memristive Behavior Fabricated by Dual Ion Beam Sputtering","authors":"Amitesh Kumar, Mangal Das, Biswajit Mandal, R. Bhardwaj, Aaryashree, A. Kranti, S. Mukherjee","doi":"10.1109/NANO.2018.8626226","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626226","url":null,"abstract":"This work reports forming-free (FF) resistive switching (RS) with high endurance and retention for ZnO based thin films fabricated by dual ion beam sputtering (DIBS). Undoped and Ga-doped ZnO thin films have been used to compare the effect of doping upon RS behavior.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"152 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121331184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626308
Mohadeseh A. Baboli, M. Slocum, A. Giussani, S. Hubbard, P. Mohseni
Vertically-aligned, high aspect ratio In $text{InAs}_{y}mathrm{P}_{1-y}, text{In}_{x}text{Al}_{1-x}text{As}$, and core-shell InAsP-InP nanowires (NWs) are grown directly on two-dimensional (2-D) monolayer graphene via seed-free pseudo-van der Waals epitaxy (vdWE), as reported here for the first time. Growth is achieved using metalorganic chemical vapor deposition (MOCVD). By altering growth temperature and molar flow ratio of precursors, the composition Of $text{InAs}_{y}mathrm{P}_{1-y}$ NWs can be tuned within the $1leq yleq 0.8$ range. Similarly, by tuning the group-III precursor flow rates, $text{In}_{x}text{Al}_{1-x}$ As composition can be modified in the $1 < x < 0.5$ range. NW morphology and NW array number density variances are measured for different ternary compositions as functions of precursor flow rates and growth temperature.
{"title":"Self-Assembled InAsP and lnAlAs Nanowires on Graphene Via Pseudo-Van Der Waals Epitaxy","authors":"Mohadeseh A. Baboli, M. Slocum, A. Giussani, S. Hubbard, P. Mohseni","doi":"10.1109/NANO.2018.8626308","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626308","url":null,"abstract":"Vertically-aligned, high aspect ratio In $text{InAs}_{y}mathrm{P}_{1-y}, text{In}_{x}text{Al}_{1-x}text{As}$, and core-shell InAsP-InP nanowires (NWs) are grown directly on two-dimensional (2-D) monolayer graphene via seed-free pseudo-van der Waals epitaxy (vdWE), as reported here for the first time. Growth is achieved using metalorganic chemical vapor deposition (MOCVD). By altering growth temperature and molar flow ratio of precursors, the composition Of $text{InAs}_{y}mathrm{P}_{1-y}$ NWs can be tuned within the $1leq yleq 0.8$ range. Similarly, by tuning the group-III precursor flow rates, $text{In}_{x}text{Al}_{1-x}$ As composition can be modified in the $1 < x < 0.5$ range. NW morphology and NW array number density variances are measured for different ternary compositions as functions of precursor flow rates and growth temperature.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127411285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626256
H. Johnston, A. Murphy, Y. Qiu, R. McPhillips, R. Pollord, S. Cochran
The aim of this work is to evaluate the response of gold nanowire arrays (Fig. 1) to incident sonication. The excitation of localised surface plasmon resonance (LSPR) on noble-metal nanoparticles has various applications, including use as a label-free biosensing technique. Gold nanoparticles are of particular interest as they are biocompatible (highly stable, non toxic, unlike silver [1]) and their resonant wavelength can be tuned across the visible spectrum by varying the dimensions and geometry of the nanoparticle.
{"title":"Effect of Ultrasonication on the Attachment of Biological material in Proximity of Gold Nanowire Arrays","authors":"H. Johnston, A. Murphy, Y. Qiu, R. McPhillips, R. Pollord, S. Cochran","doi":"10.1109/NANO.2018.8626256","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626256","url":null,"abstract":"The aim of this work is to evaluate the response of gold nanowire arrays (Fig. 1) to incident sonication. The excitation of localised surface plasmon resonance (LSPR) on noble-metal nanoparticles has various applications, including use as a label-free biosensing technique. Gold nanoparticles are of particular interest as they are biocompatible (highly stable, non toxic, unlike silver [1]) and their resonant wavelength can be tuned across the visible spectrum by varying the dimensions and geometry of the nanoparticle.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124880976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626230
S. Bose, S. Shirai, J. Mallinson, S. Acharya, E. Galli, S. Brown
The inherent power of the biological brain, with regard to pattern recognition, is unparalleled and cannot even be matched by multi-million dollar supercomputers. Inspired from this, neuromorphic computation, where ideas originating from the complex structure and functionality of the biological brain are utilized for advanced computation has shown great potential. In this regard, we are developing on-chip pattern classification capabilities via inexpensive self-assembly of nanoparticles (NPs). The formation of percolating microstructure of Sn NPs and tunnel junctions leads to a complex atomic-switch network (ASN) poised near criticality. Voltage stimulation is utilized for modulating the synaptic structure of the network, which shows potential for utilization as a ‘reservoir’ in reservoir computing (RC).
{"title":"Complex network dynamics in self-assembled atomic-switch networks: prospects for neuromorphic computation","authors":"S. Bose, S. Shirai, J. Mallinson, S. Acharya, E. Galli, S. Brown","doi":"10.1109/NANO.2018.8626230","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626230","url":null,"abstract":"The inherent power of the biological brain, with regard to pattern recognition, is unparalleled and cannot even be matched by multi-million dollar supercomputers. Inspired from this, neuromorphic computation, where ideas originating from the complex structure and functionality of the biological brain are utilized for advanced computation has shown great potential. In this regard, we are developing on-chip pattern classification capabilities via inexpensive self-assembly of nanoparticles (NPs). The formation of percolating microstructure of Sn NPs and tunnel junctions leads to a complex atomic-switch network (ASN) poised near criticality. Voltage stimulation is utilized for modulating the synaptic structure of the network, which shows potential for utilization as a ‘reservoir’ in reservoir computing (RC).","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125397006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626227
O. Balogun, B. Lu, Li Zhang, Xiang Chen
Plasmonic nanostructures are versatile tools for coupling electromagnetic waves to electronic charge oscillations in noble metals at sub-wavelength length scales. The plasmon resonance frequencies of a noble metal depend on its geometry and refractive index of the material, making them ideal nanosensors for local detection of mechanical vibrations and acoustic waves. In this work, we present a pillar-based plasmonic architecture comprised of an array of gold dimers elevated from the substrate by narrow polymer or silica posts that enable efficient funneling of far-field light to plasmons in the gap between the gold dimers, with limited coupling to the substrate. The localized gap plasmon resonance of a coupled gold dimer is strongly modulated by width of the nanoscale gap separating the gold caps, as such, the nanomechanical vibration of the caps is readout by the demodulation of the intensity of the far-field optical scattering. In this work, we explore the gold dimers to demonstrate polarization sensitive detection of in-plane nanomechanical vibrations at frequencies of up 20 GHz in various dimer configurations. We explore numerical modeling to quantify the displacement sensitivity of the plasmonic-nanomechanical device and to investigate the dependence of the vibration detection sensitivity on the dimer configurations. This work may has the potential to pave the way for developing pillar plasmonic dimers for high frequency nanomechanical sensing and ultrafast reconfigurable photonic devices based on coupled plasmonic oscillators and GHz nanomechanical resonators.
{"title":"Detection of Gigahertz Nanomechanical Vibrations with Localized Gap Plasmons in a Pillar Nanoantenna Architecture","authors":"O. Balogun, B. Lu, Li Zhang, Xiang Chen","doi":"10.1109/NANO.2018.8626227","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626227","url":null,"abstract":"Plasmonic nanostructures are versatile tools for coupling electromagnetic waves to electronic charge oscillations in noble metals at sub-wavelength length scales. The plasmon resonance frequencies of a noble metal depend on its geometry and refractive index of the material, making them ideal nanosensors for local detection of mechanical vibrations and acoustic waves. In this work, we present a pillar-based plasmonic architecture comprised of an array of gold dimers elevated from the substrate by narrow polymer or silica posts that enable efficient funneling of far-field light to plasmons in the gap between the gold dimers, with limited coupling to the substrate. The localized gap plasmon resonance of a coupled gold dimer is strongly modulated by width of the nanoscale gap separating the gold caps, as such, the nanomechanical vibration of the caps is readout by the demodulation of the intensity of the far-field optical scattering. In this work, we explore the gold dimers to demonstrate polarization sensitive detection of in-plane nanomechanical vibrations at frequencies of up 20 GHz in various dimer configurations. We explore numerical modeling to quantify the displacement sensitivity of the plasmonic-nanomechanical device and to investigate the dependence of the vibration detection sensitivity on the dimer configurations. This work may has the potential to pave the way for developing pillar plasmonic dimers for high frequency nanomechanical sensing and ultrafast reconfigurable photonic devices based on coupled plasmonic oscillators and GHz nanomechanical resonators.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115177467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626414
J.D. Ouerales-Flores, J. Cao, R. Murphy, S. Fahy, I. Savić
PbTe is an important thermoelectric material for power generation applications due to its high conversion efficiency and reliability [1]. PbTe shows a shift of the electronic bandgap with temperature that is opposite to the majority of direct gap semiconductors, i.e. the gap increases with temperature [2]. In this work, we study the temperature dependence of the electronic structure and thermoelectric properties of PbTe. We perform density functional theory and density functional perturbation theory calculations [3] in the local density approximation to calculate electronic and phonon bands. We use Wannier interpolation scheme to calculate electron-phonon matrix elements [4]. Using this information, we build accurate models of electronic and phonon bands, and deformation potentials from first principles. By solving the Boltzmann equation in the momentum relaxation time approximation, we calculate the mobility and thermoelectric transport properties of PbTe. Our results are in good agreement with experiments. We find that the temperature dependence of the gap has a substantial effect on thermoelectric transport in PbTe.
{"title":"Electron-phonon coupling and thermoelectric transport in n-type PbTe","authors":"J.D. Ouerales-Flores, J. Cao, R. Murphy, S. Fahy, I. Savić","doi":"10.1109/NANO.2018.8626414","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626414","url":null,"abstract":"PbTe is an important thermoelectric material for power generation applications due to its high conversion efficiency and reliability [1]. PbTe shows a shift of the electronic bandgap with temperature that is opposite to the majority of direct gap semiconductors, i.e. the gap increases with temperature [2]. In this work, we study the temperature dependence of the electronic structure and thermoelectric properties of PbTe. We perform density functional theory and density functional perturbation theory calculations [3] in the local density approximation to calculate electronic and phonon bands. We use Wannier interpolation scheme to calculate electron-phonon matrix elements [4]. Using this information, we build accurate models of electronic and phonon bands, and deformation potentials from first principles. By solving the Boltzmann equation in the momentum relaxation time approximation, we calculate the mobility and thermoelectric transport properties of PbTe. Our results are in good agreement with experiments. We find that the temperature dependence of the gap has a substantial effect on thermoelectric transport in PbTe.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114462742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626284
Ning Luo, Di Su, Honglei Wang, Yuchen Liang, Fulin Peng, Haibo Yu, Tao Zhang, Jun Tao, Dian Zhou, Xuan Zeng, Walter Hu
__Biochips of 256 micro-ISFETs were made with 0.18 um CMOS processes towards pH based DNA sequencing. We implemented a pulse voltage biasing method to improve pH sensing performance. Compared to pulse DC biasing, pulse AC can achieve much better stability and higher sensitivity.
__256个微型isfet的生物芯片采用0.18 um CMOS工艺，用于基于pH的DNA测序。我们实现了一种脉冲电压偏置方法来提高pH值传感性能。与脉冲直流偏置相比，脉冲交流可以获得更好的稳定性和更高的灵敏度。
{"title":"Improved pH Sensing Performance with Microarray ISFETs under Pulse AC Bias","authors":"Ning Luo, Di Su, Honglei Wang, Yuchen Liang, Fulin Peng, Haibo Yu, Tao Zhang, Jun Tao, Dian Zhou, Xuan Zeng, Walter Hu","doi":"10.1109/NANO.2018.8626284","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626284","url":null,"abstract":"__Biochips of 256 micro-ISFETs were made with 0.18 um CMOS processes towards pH based DNA sequencing. We implemented a pulse voltage biasing method to improve pH sensing performance. Compared to pulse DC biasing, pulse AC can achieve much better stability and higher sensitivity.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128258873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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