A CMOS Compatible, Forming Free TaON-based ReRAM with Low Soft Errors and Good Retention!!

Abstract

In this work, we propose the TaON based RRAM with the structure of Ru/TaON/WOx/W through thermal oxidation process with plasma N2O. The TaON based devices show the low operation voltage $(\lt1.8\mathrm{V})$ without forming operation. Due to the nitrogen induced filament confinement, the variability and soft error during cycling are reduced. The TaON based RRAM also shows the excellent retention at 150 °C. The potential of the TaON based device on ultra-high density memory application inspires by the achievement of the multi-level storage by controlling the compliance current.