A radiation resistant library based on DICE and fault-tolerant delay filtering techniques in CMOS 0.18μm technology

Yangsheng Wang, Yanyan Gao, Chong Feng, N. Zhang
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Abstract

A radiation resistant standard cell library is completed based on SMIC 0.18 μm technology in this paper. Standard cell library includes combinatorial logic cells and sequential logic cells. SET (Single Event Transient) effect always occurs in combinatorial logic cells, and SEU (Single Event Upset) effect always occurs in sequential logic cells. SEL(Single Event Latchup) and TID(Total Ionizing Dose) effects affect all logic cells. According to radiation effects, logic cells in the standard cell library are designed with harden methods at the circuit level and the layout level. Combination logic cells adopt fault-tolerant delay filtering method in circuit level, and sequential logic cells use DICE structure in circuit design. A guard ring has been added to the layout design for the SEL and TID effects. Then physical information and timing information are extracted for all cells, and the library building process is completed. Finally we use EDA tools to verify the availability of the anti-radiation library.
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基于CMOS 0.18μm技术的DICE和容错延迟滤波技术的抗辐射库
本文基于SMIC 0.18 μm技术完成了一个耐辐射标准单元库。标准单元库包括组合逻辑单元和顺序逻辑单元。SET (Single Event Transient)效应常发生在组合逻辑单元中,而SEU (Single Event Upset)效应常发生在顺序逻辑单元中。SEL(单事件锁定)和TID(总电离剂量)效应影响所有逻辑细胞。根据辐射效应,对标准单元库中的逻辑单元进行了电路级和布局级的强化设计。组合逻辑单元在电路级采用容错延迟滤波方法,顺序逻辑单元在电路设计上采用DICE结构。一个保护环被添加到SEL和TID效果的布局设计中。然后提取所有单元的物理信息和时间信息,完成库的构建过程。最后利用EDA工具验证了抗辐射库的可用性。
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