A class-AB flipped voltage follower output stage

F. Centurelli, P. Monsurrò, A. Trifiletti
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引用次数: 24

Abstract

In this paper we present a novel topology of a class-AB flipped voltage follower (FVF) output stage. This stage has better slew-rate performance than the standard FVF buffer, and better linearity and output resistance than the standard class-AB stage. Besides, it achieves higher output voltage swing than other class-AB FVF buffers previously presented in the literature. It is thus suitable for low-voltage low-power stages requiring low bias currents but driving large capacitive loads with large signal swing. These buffers have been compared using 65nm CMOS technology models provided by STMicroelectronics. The buffer consumes 10µA from a 1.2V supply, and has a bandwidth of 100MHz with a 2pF load. It has −50dB HD2 and −60dB HD3 when the input is a 0.5VPP sinusoid at 1MHz, and the 1% settling time to a 0.5VPP square wave is about 20ns.
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A类翻转电压跟随器输出级
本文提出了一种新颖的ab类翻转电压从动器(FVF)输出级拓扑。该级比标准FVF缓冲器具有更好的自旋速率性能,比标准ab级具有更好的线性度和输出电阻。此外,它比以往文献中提出的其他ab类FVF缓冲器实现更高的输出电压摆幅。因此,它适用于需要低偏置电流但驱动具有大信号摆幅的大容性负载的低压低功率级。这些缓冲器使用意法半导体提供的65nm CMOS技术模型进行了比较。该缓冲器从1.2V电源中消耗10µA,在2pF负载下具有100MHz的带宽。当输入为0.5VPP正弦波时,其HD2和HD3分别为- 50dB和- 60dB, 0.5VPP方波1%的沉降时间约为20ns。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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