{"title":"The equipment for measuring of concentration profiles using the spreading resistance method","authors":"J. Hybler, V. Svagr","doi":"10.1109/SMICND.1996.557390","DOIUrl":null,"url":null,"abstract":"The equipment for measuring of concentration profiles in semiconductor structures using the spreading resistance method has been developed. Device is designed for measuring local contact resistance in range from 1/spl Omega/ to 10M/spl Omega/ with high level of accuracy. Resistance is measured under conditions of dc constant current with measured contact voltage below 10 mV. The stepping of the sample holder and the measuring pin movement (down and up) and data collection and processing are fully controlled by the PC.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1996.557390","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The equipment for measuring of concentration profiles in semiconductor structures using the spreading resistance method has been developed. Device is designed for measuring local contact resistance in range from 1/spl Omega/ to 10M/spl Omega/ with high level of accuracy. Resistance is measured under conditions of dc constant current with measured contact voltage below 10 mV. The stepping of the sample holder and the measuring pin movement (down and up) and data collection and processing are fully controlled by the PC.
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