Physical modeling of NBTI: From individual defects to devices

Abstract

Given the rapid recovery of the degradation induced by bias-temperature stress, the understanding and modeling of NBTI has been a challenge for nearly half a century. With the introduction of the time-dependent defect spectroscopy (TDDS), NBTI could be studied at the single defect level, confirming that it is dominated by a collection of first-order reactions rather then the previously invoked reaction-diffusion mechanism. The most intriguing feature of these first-order processes is the wide distribution of their time constants, which can be visualized in capture/emission time (CET) maps. In the following we clarify the microscopic link between individual defects seen in TDDS studies and the response of a large ensemble visible in the CET maps. In particular, we show how the distribution of the individual defect parameters can be extracted from measurements on large-area devices.