{"title":"X-band MMIC switch with 70 dB isolation and 0.5 dB insertion loss","authors":"D. Blackwell, D. Dawson, D. Buck","doi":"10.1109/MCS.1995.470982","DOIUrl":null,"url":null,"abstract":"A single-pole, single-throw reflective MMIC switch with 0.5 dB insertion loss and 70 dB isolation over X-band has been demonstrated. A fabrication process that was optimized to achieve the best performance for switch FETs produced this exceptional device. The FET OFF capacitance was reduced by a factor of 1.6 by selectively recessing into the backside of the wafer underneath the FETs to within 1 /spl mu/m of the top surface. The FET ON resistance remained the same. The reduced FET OFF capacitance allowed the use of larger periphery FETs to obtain the improved performance. The Ron-Coff product of this device is 30% lower than previously reported results.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"205 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1995.470982","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
A single-pole, single-throw reflective MMIC switch with 0.5 dB insertion loss and 70 dB isolation over X-band has been demonstrated. A fabrication process that was optimized to achieve the best performance for switch FETs produced this exceptional device. The FET OFF capacitance was reduced by a factor of 1.6 by selectively recessing into the backside of the wafer underneath the FETs to within 1 /spl mu/m of the top surface. The FET ON resistance remained the same. The reduced FET OFF capacitance allowed the use of larger periphery FETs to obtain the improved performance. The Ron-Coff product of this device is 30% lower than previously reported results.<>
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