Analysis of Low Frequency Noise in Nanoscale InAsxSb1-x MOSFETs with Varying Compositions

Abstract

Using numerical analysis we report, for first time, the analog/ RF circuit behaviour and low frequency noise (LFN) performance of $\text{InAs}_{x}Sb_{1-x}$ - channel nMOSFETs having different As contents at channel length of 30 nm. We explore our investigation for molar fraction $x$ ranging 0.25 - 0.65 and substrate bias in the range from - 0.5 to 0.5V. We have obtained the drain current $I_{D}$ and transconductance $g_{M}$ taking into account the effect of composition fraction and substrate bias effects. The drain current model is verified with reported experimental data. The simulated values of drain current $I_{D}$ and transconductance $g_{M}$ are employed to estimate the drain current power spectral density, cut -off frequency $f_{T}$ and minimum noise power $F_{min}$ as a function composition fraction of the substrate. Our investigation reveals that LFN noise can be controlled by proper selection of the composition fraction as well as substrate bias of UTB channel MOSFETs.