Yuta Takahashi, M. Fujino, H. Nakagawa, K. Kikuchi, T. Taino
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Abstract
In this study, Deposited Nb and Si/Nb samples were bonded directly by surface activated bonding method at room temperature. TEM observation of the Nb/Nb interface confirmed an intermediate layer of about 3 nm. A superconducting current of 4–6 mA was observed at 0.3 K in a Si (5 nm) sample deposited on Nb thin film.
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