{"title":"A low-power 435-MHz SOI CMOS LNA and mixer","authors":"E. Zencir, N. Dogan, E. Arvas","doi":"10.1109/MWSYM.2003.1210999","DOIUrl":null,"url":null,"abstract":"A low-power 435-MHz single-ended low-noise amplifier and a double-balanced mixer was implemented in a 0.35-/spl mu/m Silicon On Insulator (SOI) CMOS process. The single-ended LNA has a measured noise figure of 2.91 dB, and the mixer has an input third-order intercept point of +20 dBm. Total power dissipation of the LNA and mixer is 24 mW from a 2.5-V supply. This is the first LNA-mixer pair implemented at 435 MHz using an SOI CMOS process.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE MTT-S International Microwave Symposium Digest, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2003.1210999","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
A low-power 435-MHz single-ended low-noise amplifier and a double-balanced mixer was implemented in a 0.35-/spl mu/m Silicon On Insulator (SOI) CMOS process. The single-ended LNA has a measured noise figure of 2.91 dB, and the mixer has an input third-order intercept point of +20 dBm. Total power dissipation of the LNA and mixer is 24 mW from a 2.5-V supply. This is the first LNA-mixer pair implemented at 435 MHz using an SOI CMOS process.
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