{"title":"Laser-chemical three-dimensonal writing of multimaterial structures for microelectromechanics","authors":"T. Bloomstein, D. Ehrlich","doi":"10.1109/MEMSYS.1991.114796","DOIUrl":null,"url":null,"abstract":"A patterning machine capable of 5*10/sup 4/ pixel per second random access scanning has been developed as a tool for laser microchemical fabrication of three-dimensional parts. The tool is designed to implement precision laser deposition and etching reactions through a direct interface to solid modeling CAD/CAM (computer-aided design/manufacturing) software. Initial results with the three-dimensional laser patterning machine demonstrate clean etching of germanium and silicon with micrometer depth control and speeds one to two orders of magnitude faster than electric discharge machining. High material selectivity has been exploited to write buried flow channels under oxide membranes.<<ETX>>","PeriodicalId":258054,"journal":{"name":"[1991] Proceedings. IEEE Micro Electro Mechanical Systems","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1991] Proceedings. IEEE Micro Electro Mechanical Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.1991.114796","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15
Abstract
A patterning machine capable of 5*10/sup 4/ pixel per second random access scanning has been developed as a tool for laser microchemical fabrication of three-dimensional parts. The tool is designed to implement precision laser deposition and etching reactions through a direct interface to solid modeling CAD/CAM (computer-aided design/manufacturing) software. Initial results with the three-dimensional laser patterning machine demonstrate clean etching of germanium and silicon with micrometer depth control and speeds one to two orders of magnitude faster than electric discharge machining. High material selectivity has been exploited to write buried flow channels under oxide membranes.<>
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