{"title":"Simultaneous spin and charge transport in gated Si devices","authors":"Jing Li, I. Appelbaum","doi":"10.1109/DRC.2011.5994469","DOIUrl":null,"url":null,"abstract":"Recent advances in the development of techniques for electrical injection and detection of spin-polarized electrons in silicon have aroused intensive research on exploiting devices and circuits that utilize the spin degree of freedom [1–3] as well as electron charge in this dominant material of the semiconductor integrated circuits industry.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994469","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Recent advances in the development of techniques for electrical injection and detection of spin-polarized electrons in silicon have aroused intensive research on exploiting devices and circuits that utilize the spin degree of freedom [1–3] as well as electron charge in this dominant material of the semiconductor integrated circuits industry.