H. El Dirani, M. Bawedin, K. Lee, M. Parihar, X. Mescot, P. Fonteneau, P. Galy, F. Gámiz, Y.-T. Kim, P. Ferrari, S. Cristoloveanu
{"title":"Competitive 1T-DRAM in 28 nm FDSOI technology for low-power embedded memory","authors":"H. El Dirani, M. Bawedin, K. Lee, M. Parihar, X. Mescot, P. Fonteneau, P. Galy, F. Gámiz, Y.-T. Kim, P. Ferrari, S. Cristoloveanu","doi":"10.1109/S3S.2016.7804402","DOIUrl":null,"url":null,"abstract":"We demonstrate experimentally a capacitorless IT-DRAM fabricated with 28 nm FDSOI. The Z2-FET memory cell features a large current sense margin and long retention time at T = 25°C and 85°C. Systematic measurements show that Z2-FET exhibits negligible OFF-state current at low drain/gate bias and is suitable as a low-power embedded memory.","PeriodicalId":145660,"journal":{"name":"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/S3S.2016.7804402","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
We demonstrate experimentally a capacitorless IT-DRAM fabricated with 28 nm FDSOI. The Z2-FET memory cell features a large current sense margin and long retention time at T = 25°C and 85°C. Systematic measurements show that Z2-FET exhibits negligible OFF-state current at low drain/gate bias and is suitable as a low-power embedded memory.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
