Jianbo Liang, Daiki Takatsuki, Y. Shimizu, M. Higashiwaki, Y. Ohno, Y. Nagai, N. Shigekawa
{"title":"Fabrication of Ga2O3/Si direct bonding interface for high power device applications","authors":"Jianbo Liang, Daiki Takatsuki, Y. Shimizu, M. Higashiwaki, Y. Ohno, Y. Nagai, N. Shigekawa","doi":"10.1109/LTB-3D53950.2021.9598435","DOIUrl":null,"url":null,"abstract":"The fabrication of Ga<inf>2</inf>O<inf>3</inf>(010)/Si(100) and Ga<inf>2</inf>O<inf>3</inf>(001)/Si(100) interfaces is achieved by the surface-activated bonding (SAB) of Ga<inf>2</inf>O<inf>3</inf> and Si substrates. The structure of the bonding interfaces is characterized by transmission electron microscope (TEM).","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LTB-3D53950.2021.9598435","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The fabrication of Ga2O3(010)/Si(100) and Ga2O3(001)/Si(100) interfaces is achieved by the surface-activated bonding (SAB) of Ga2O3 and Si substrates. The structure of the bonding interfaces is characterized by transmission electron microscope (TEM).
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