Effect of Light on the p-type Doping of P3HT OFET by Oxygen

Shivangi Srivastava, Praveen C Ramamurthy
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Abstract

Organic electronic devices gained much interest in the last few decades due to their various application in biosensing, gas sensing, photo-sensing, memory device, synaptic devices for neuromorphic computing, flexible electronics application, wearable device, LED, and OPV. Despite all these various applications, organic electronic devices lack behind their inorganic counterpart because of their poor environmental stability. In this study, the effect of light on P3HT OFET was observed in atmospheric conditions. Electrical characteristics showed that p-type doping is high in the presence of light. It was also suggested by the red shift in Raman data and by the change in surface potential after light exposure by Kelvin Probe Force Microscopy analysis.
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光对p型氧掺杂P3HT OFET的影响
有机电子器件由于其在生物传感、气体传感、光敏、记忆器件、神经形态计算的突触器件、柔性电子应用、可穿戴设备、LED和OPV等领域的广泛应用,在过去的几十年里获得了广泛的关注。尽管有各种各样的应用,有机电子器件由于其环境稳定性差而落后于无机电子器件。在本研究中,在大气条件下观察了光对P3HT OFET的影响。电学特性表明,p型掺杂在光存在下高。开尔文探针力显微镜分析的拉曼数据红移和暴露后表面电位的变化也证实了这一点。
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