Effects of Chemical Displacing Time for the Characteristics of the Nonvolatile Oxide-based Resistive Memory Devices

Abstract

A nonvolatile oxide-based resistive memory device by using chemical displacing technique (CDT) copper as the metal electrode was demonstrated in this paper. The advantages of CDT Cu include low-cost, high selectivity, and low-temperature process. The fabricated CDT Cu film performed a rough surface, which was beneficial to the filament pathway formation of the electrochemical metallization (ECM) type ReRAM device. We compared the roughness of CDT Cu films in different chemical displacing time, and demonstrated the impact of the CDT Cu electrode to the electrical properties of the resistive memory devices. The obtained results show that the device with short CDT time, which have rough surface, exhibits low operation electric field and good reliability. This is because low voltage is needed and thus effect of Joule heating can be effectively diminished during operation.