Air-stable chemical doping of carbon nanotube transistors [CNFETs]

Abstract

In this paper, we have successfully demonstrated, for the first time, air-stable chemical p-doping of CNFETs via charge transfer; introduced tunability of the V/sub th/, transformed scaled CNFETs from ambipolar to unipolar, improved I/sub on/ by 2-3 orders of magnitude, suppressed minority carrier injection (immunity from drain induced I/sub off/ degradation from intrinsic Schottky barrier CNFET), yielding an excellent I/sub on//I/sub off/ ratio of 10/sup 6/, and demonstrated excellent DIBL-like behavior.