{"title":"A 0.039mm2 inverter-based 1.82mW 68.6dB-SNDR 10MHz-BW CT-ΣΔ-ADC in 65nm CMOS","authors":"Sebastian Zeller, Christian Muenker, R. Weigel","doi":"10.1109/ESSCIRC.2013.6649137","DOIUrl":null,"url":null,"abstract":"We propose design techniques for the realization of power- and area-efficient CT-ΣΔ-ADCs in ultra deep submicron CMOS: A resonant single-opamp 3rd order integrator with loss compensation, an inverter-based opamp with digitally-assisted biasing and common mode control, a pseudo-differential modulator topology with quasi-1.5-bit quantization and FIR-DACs with passive DT compensation. A highly compact 41.4 fJ/conv.-step, 77 dB-SFDR, 1.1 V ADC has been implemented to prove these concepts. The entire active analog circuitry in this minimalistic 3rd order modulator consists of only 10 CMOS inverters.","PeriodicalId":183620,"journal":{"name":"2013 Proceedings of the ESSCIRC (ESSCIRC)","volume":"134 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Proceedings of the ESSCIRC (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2013.6649137","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
We propose design techniques for the realization of power- and area-efficient CT-ΣΔ-ADCs in ultra deep submicron CMOS: A resonant single-opamp 3rd order integrator with loss compensation, an inverter-based opamp with digitally-assisted biasing and common mode control, a pseudo-differential modulator topology with quasi-1.5-bit quantization and FIR-DACs with passive DT compensation. A highly compact 41.4 fJ/conv.-step, 77 dB-SFDR, 1.1 V ADC has been implemented to prove these concepts. The entire active analog circuitry in this minimalistic 3rd order modulator consists of only 10 CMOS inverters.