I.S. Park, B. Lee, S. Choi, Jae Soon Im, Seung Hwan Lee, K. Park, Joo-Won Lee, Y. Hyung, Yeong-kwan Kim, H. Park, Y. Park, Sang In Lee, M. Lee
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引用次数: 3
Abstract
A novel MIS-Al/sub 2/O/sub 3/ capacitor technology was developed with the low thermal budget and showed the superior dielectric characteristics, which were achieved by adopting ALD technique for the Al/sub 2/O/sub 3/ film deposition. A fully integrated 1 Gbit DRAM with MIS-Al/sub 2/O/sub 3/ capacitor was successfully worked, where storage capacitance and leakage current at 1.2 V were 30 fF/cell and 0.5 fA/cell, respectively. Moreover, the excellent dielectric characteristics were confirmed from the result that Vp for generating solid "0" 10 sec fail bit counts was measured to be 2.4 V.
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