Reliability investigation of SiC bipolar device module in long time inverter operation

A. Tanaka, S. Ogata, T. Izumi, K. Nakayama, T. Hayashi, Y. Miyanagi, K. Asano
{"title":"Reliability investigation of SiC bipolar device module in long time inverter operation","authors":"A. Tanaka, S. Ogata, T. Izumi, K. Nakayama, T. Hayashi, Y. Miyanagi, K. Asano","doi":"10.1109/ISPSD.2012.6229066","DOIUrl":null,"url":null,"abstract":"The reliability of SiC bipolar device modules consisting of SiC commutated gate turn-off thyristors and SiC pin diodes fabricated on a 4° off-cut SiC substrate is investigated. According to three-phase inverter operation using a Back to Back system at DC bus voltage of 2 kV and effective output power of approximately 120 kW, the SiC module could achieve the world's first successful inverter operation lasting more than 1000 hours, thereby verifying its reliability in long time inverter operation.","PeriodicalId":371298,"journal":{"name":"2012 24th International Symposium on Power Semiconductor Devices and ICs","volume":"227 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 24th International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2012.6229066","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

Abstract

The reliability of SiC bipolar device modules consisting of SiC commutated gate turn-off thyristors and SiC pin diodes fabricated on a 4° off-cut SiC substrate is investigated. According to three-phase inverter operation using a Back to Back system at DC bus voltage of 2 kV and effective output power of approximately 120 kW, the SiC module could achieve the world's first successful inverter operation lasting more than 1000 hours, thereby verifying its reliability in long time inverter operation.
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SiC双极器件模块在逆变器长时间运行中的可靠性研究
研究了在4°截止SiC衬底上由SiC整流栅关断晶闸管和SiC引脚二极管组成的SiC双极器件模块的可靠性。根据直流母线电压为2 kV,有效输出功率约为120 kW的背靠背三相逆变器运行情况,SiC模块在世界上首次成功实现了逆变器持续运行1000小时以上,验证了其在逆变器长时间运行中的可靠性。
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