Totally Different Sputter Damage Profiles Of Metal And Si Single Crystal Smrfaccs Investigated By Medium Energy Ion Scattering Spectroscopy

Abstract

IJnderstanding the radiation damage cluc to low energy ion boiiibxdnient has IXY~I i o i i c ' ( 1 1 Generally. it has been i-egardcd lor :I lorig I imc . the major issues in sputtering and etching that the energetic keV ion bombardment dcsti-oys the su~face crystalline \tixtcture 111) 1 ( I anioiyhization. However, most of the radiation damage studies have been basecl on I A J \ \ Energy Electron Dilfraction (LEED). €Iowever. the LEED results are not sensitive. to ih( non-periodic local atomic structure, because the coherent lengths of the electrons lx i i ' i i l l(4 ( ( I the surface are -1 to 10nni. It has been shown that niedlum energq ion scalterinK spectroscopy (i?lEIS 1 is a powerid tool foiinvesligating atomic stiiictiu-e and comwisi l ion profiles with a couple of atomic layer depth resolution. Since the channeling and blocl~ii rg effects are mainly detei-nined by the neighboring atoms, the stiiicti1ral infomiations (~ l ) t~ i i i ivd from MEIS are local in the nature in contrast to the periodic long range ordered st i -uc~l i i i~c €rom LEED. the radiation damage formed by low enei-gk ion beam sput tei-ing. Therefore, MEIS has unique features to probe local s~-~ichual changc tlut. to