Ns laser annealing for junction activation preserving inter-tier interconnections stability within a 3D sequential integration

C. Fenouillet-Béranger, P. Acosta-Alba, B. Mathieu, S. Kerdilès, M.-P. Samson, B. Previtali, N. Rambal, V. Lapras, F. Ibars, A. Roman, R. Kachtouli, P. Besson, J. Nieto, L. Pasini, L. Brunet, F. Aussenac, J. Hartmann, F. Mazzamuto, I. Toqué-Trésonne, K. Huet, P. Batude, M. Vinet
{"title":"Ns laser annealing for junction activation preserving inter-tier interconnections stability within a 3D sequential integration","authors":"C. Fenouillet-Béranger, P. Acosta-Alba, B. Mathieu, S. Kerdilès, M.-P. Samson, B. Previtali, N. Rambal, V. Lapras, F. Ibars, A. Roman, R. Kachtouli, P. Besson, J. Nieto, L. Pasini, L. Brunet, F. Aussenac, J. Hartmann, F. Mazzamuto, I. Toqué-Trésonne, K. Huet, P. Batude, M. Vinet","doi":"10.1109/S3S.2016.7804375","DOIUrl":null,"url":null,"abstract":"In this paper, the energy process window of nanosecond (ns) laser annealing for junctions activation has been determined for several dopants (As, P, BF2). The different recrystallization states observed when tuning laser energy density are explained by numerical simulations. Within these conditions, the laser impact on the thermal stability of ULK/copper inter-tiers interconnections has been evaluated for a 28nm node backend metal 1 design rules technology both from morphological and electrical perspectives. This study highlights the interest of ns laser anneal for CoolCube™ 3D integration.","PeriodicalId":145660,"journal":{"name":"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/S3S.2016.7804375","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10

Abstract

In this paper, the energy process window of nanosecond (ns) laser annealing for junctions activation has been determined for several dopants (As, P, BF2). The different recrystallization states observed when tuning laser energy density are explained by numerical simulations. Within these conditions, the laser impact on the thermal stability of ULK/copper inter-tiers interconnections has been evaluated for a 28nm node backend metal 1 design rules technology both from morphological and electrical perspectives. This study highlights the interest of ns laser anneal for CoolCube™ 3D integration.
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在三维连续积分中保持层间互连稳定性的结活化的Ns激光退火
本文确定了几种掺杂剂(As, P, BF2)的纳秒激光退火结活化的能量过程窗口。通过数值模拟解释了激光能量密度调整时观察到的不同再结晶状态。在这些条件下,从形态学和电学角度评估了激光对28nm节点后端金属1设计规则技术的ULK/铜层互连热稳定性的影响。这项研究突出了ns激光退火对CoolCube™3D集成的兴趣。
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