Rapid test method for thermal characteristics of semiconductor devices

Abstract

The variations of the electrical parameters of semiconductor devices with changes in temperature are important for industrial and other applications of these devices. Calibrations of both the linear relationships of device parameters with temperature in thermo-sensitive electrical parameters testing and the nonlinear properties of other device parameters with temperature are very time-consuming processes when using the traditional oven methods. In this work, we proposed a method that uses a linear temperature ramping plate. The device under test was placed on this plate and the device temperature, physical parameters and the time (t) were recorded at 0.2-s intervals. The curve of the parameter variations with temperature was recorded dynamically over a period of 350 s as the temperature ranged from 20°C to 120°C. Comparison with the traditional static oven method showed very good agreement between the results obtained using the two methods, but the time required for the proposed method was reduced dramatically.