{"title":"Reliability analysis of ESD for novel image sensor with CMOS readout circuit","authors":"Y. Ye, J. Han, J. Li, G. Zhan, R. Zhu, F. Guo","doi":"10.1109/IPFA.2009.5232613","DOIUrl":null,"url":null,"abstract":"According to the characterization of a new image sensor with quantum dots-quantum well (QDs-QW) hybrid hetero-structure, several electrostatic discharge (ESD) protection approaches for readout integrated circuits (ROIC) applied to novel image sensor with state-of-the-art CMOS technology were carefully designed. The results were presented and analyzed in this paper.","PeriodicalId":210619,"journal":{"name":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2009.5232613","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
According to the characterization of a new image sensor with quantum dots-quantum well (QDs-QW) hybrid hetero-structure, several electrostatic discharge (ESD) protection approaches for readout integrated circuits (ROIC) applied to novel image sensor with state-of-the-art CMOS technology were carefully designed. The results were presented and analyzed in this paper.
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