{"title":"A new approach for the fabrication of gain-coupled DFB laser diodes using focused ion beams","authors":"E. Hofling, A. Orth, J. Reithmaier, A. Forchel","doi":"10.1109/ISLC.1996.553761","DOIUrl":null,"url":null,"abstract":"Gain-coupled distributed feedback (DFB) quantum well laser diodes have been made by focused ion beam implantation and subsequent thermal annealing. The uncoated laser devices show single longitudinal mode emission with very high yield.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1996.553761","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Gain-coupled distributed feedback (DFB) quantum well laser diodes have been made by focused ion beam implantation and subsequent thermal annealing. The uncoated laser devices show single longitudinal mode emission with very high yield.
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