A. Šatka, J. Priesol, M. Bernat, D. Donoval, J. Kovác, D. Allsopp, J. Kuzmík
{"title":"Time resolved EBIC study of InAlN/GaN HFETs","authors":"A. Šatka, J. Priesol, M. Bernat, D. Donoval, J. Kovác, D. Allsopp, J. Kuzmík","doi":"10.1109/ASDAM.2014.6998666","DOIUrl":null,"url":null,"abstract":"Transient phenomena in depletion-mode Gallium Nitride (GaN) Heterostructure Field-Effect Transistor (HFET) structures biased to various operation points corresponding to their real applications has been studied using Time-Resolved Electron Beam Induced Current (TREBIC) method. It has been found, that the amplitude and shape of the transient response depends on the gate voltage VGs and position of the electron beam in the active region of the HFET. Inhomogeneous lateral build-up and recovery of electric field has been observed at the gate in the drain access region of the HFETs, attributed to inhomogeneous distribution of the trapping centres in proximity of the Schottky gate electrode.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2014.6998666","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Transient phenomena in depletion-mode Gallium Nitride (GaN) Heterostructure Field-Effect Transistor (HFET) structures biased to various operation points corresponding to their real applications has been studied using Time-Resolved Electron Beam Induced Current (TREBIC) method. It has been found, that the amplitude and shape of the transient response depends on the gate voltage VGs and position of the electron beam in the active region of the HFET. Inhomogeneous lateral build-up and recovery of electric field has been observed at the gate in the drain access region of the HFETs, attributed to inhomogeneous distribution of the trapping centres in proximity of the Schottky gate electrode.
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