{"title":"Enhancement of Resonance by the Use of Multiple Tunnel Barriers in Bilayer Graphene-Based Interlayer Tunnel Field Effect Transistors","authors":"N. Prasad, S. Banerjee, L. Register","doi":"10.1109/SISPAD.2018.8551642","DOIUrl":null,"url":null,"abstract":"Interlayer tunnel field effect transistors (ITFETs) make use of resonant tunneling between two layers of two-dimensional semiconductors to create a negative differential resistance. A narrow resonance allows for lowering the operating voltages in potential circuit applications. The use of multiple tunnel barriers is investigated as a means to obtain a narrow resonance, as the device dimensions are scaled down. For specificity, we analyze a bilayer graphene-based ITFET system.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"30 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2018.8551642","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Interlayer tunnel field effect transistors (ITFETs) make use of resonant tunneling between two layers of two-dimensional semiconductors to create a negative differential resistance. A narrow resonance allows for lowering the operating voltages in potential circuit applications. The use of multiple tunnel barriers is investigated as a means to obtain a narrow resonance, as the device dimensions are scaled down. For specificity, we analyze a bilayer graphene-based ITFET system.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
