Failure tests on 64 Mb SDRAM in radiation environment

Proceedings 1999 IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems (EFT'99) Pub Date : 1999-11-01 DOI:10.1109/DFTVS.1999.802881

S. Bertazzoni, G. Cardarilli, D. Piergentili, M. Salmeri, A. Salsano, D. D. Giovenale, G. C. Grande, P. Marinucci, S. Sperandei, S. Bartalucci, G. Mazzenga, M. Ricci, V. Bidoli, D. D. Francesco, P. Picozza, A. Rovelli

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引用次数: 9

Abstract

In this paper we analyze the failures of Commercial Off The Shelf (COTS) 64 Mb Synchronous DRAM (SDRAM) in a radiation environment. The experimental setup, the test procedure, and the results of three different test runs at the Catania LNS-INFN cyclotron are described in some detail. Three kinds of heavy ions were used to test devices under different conditions of energy release that generates different amount of charge inside the chip. In particular, 30 MeV/AMU /sup 93/Nb (LET/sub Si//spl sim/21 MeV/(mg/cm/sup 2/), R/sub Si//spl sim/397 /spl mu/m), 30 MeV/AMU /sup 120/Sn (LET/sub Si//spl sim/30 MeV/(mg/cm/sup 2/), R/sub Si//spl sim/370 /spl mu/m) and 15 MeV/AMU /sup 197/Au (LET/sub Si//spl sim/90 MeV/(mg/cm/sup 2/), R/sub Si//spl sim/95 /spl mu/m) were used. In all cases, the bare dies were directly bonded on an AF4 carrier to avoid plastic and lead-frame shielding. Different failure types that could affect the operations of a system based on this device were registered. To verify that the characteristics of the events depend on the zone struck by the particle, a specific test was performed.

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辐射环境下64mb SDRAM的失效测试

本文分析了商用现货64mb同步DRAM (SDRAM)在辐射环境下的故障。详细介绍了卡塔尼亚LNS-INFN回旋加速器的实验装置、测试过程和三次不同的测试结果。三种重离子在不同的能量释放条件下对器件进行测试，从而在芯片内部产生不同的电荷量。其中，30 MeV/AMU /sup 93/Nb (LET/sub Si//spl sim/21 MeV/(mg/cm/sup 2/))、R/sub Si//spl sim/397 /spl mu/m)、30 MeV/AMU /sup 120/Sn (LET/sub Si//spl sim/30 MeV/(mg/cm/sup 2/)、R/sub Si//spl sim/370 /spl mu/m)和15 MeV/AMU /sup 197/Au (LET/sub Si//spl sim/90 MeV/(mg/cm/sup 2/)、R/sub Si//spl sim/95 /spl mu/m)。在所有情况下，裸模直接粘合在AF4载体上，以避免塑料和铅框架屏蔽。可能影响基于该设备的系统运行的不同故障类型被注册。为了验证事件的特征取决于粒子撞击的区域，进行了具体的测试。

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Proceedings 1999 IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems (EFT'99)

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