{"title":"A 0.35/spl mu/m CMOS linear differential amplifier independent of threshold voltage","authors":"C. Popa","doi":"10.1109/ASDAM.2002.1088513","DOIUrl":null,"url":null,"abstract":"The differential amplifier presented in this paper is based on the principle of the constant sum of the gate-source voltages, which assures, in a first-order analysis, the linearization of the circuit. The new idea is to cancel the nonlinearities introduced by the second-order effects such as short channel effect, mobility degradation and bulk effect by using a parallel connection of two complementary excited differential stages. The circuit is implemented in 0.35 /spl mu/m CMOS technology on a die area of 20 /spl mu//35 /spl mu/. The SPICE simulation using BSIM3v3 model and based on the mentioned technology parameters validates the estimated theoretical results about the linearity (a linearity error of 0.5% for an extended input range of 1 V).","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2002.1088513","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The differential amplifier presented in this paper is based on the principle of the constant sum of the gate-source voltages, which assures, in a first-order analysis, the linearization of the circuit. The new idea is to cancel the nonlinearities introduced by the second-order effects such as short channel effect, mobility degradation and bulk effect by using a parallel connection of two complementary excited differential stages. The circuit is implemented in 0.35 /spl mu/m CMOS technology on a die area of 20 /spl mu//35 /spl mu/. The SPICE simulation using BSIM3v3 model and based on the mentioned technology parameters validates the estimated theoretical results about the linearity (a linearity error of 0.5% for an extended input range of 1 V).