A 0.35/spl mu/m CMOS linear differential amplifier independent of threshold voltage

C. Popa
{"title":"A 0.35/spl mu/m CMOS linear differential amplifier independent of threshold voltage","authors":"C. Popa","doi":"10.1109/ASDAM.2002.1088513","DOIUrl":null,"url":null,"abstract":"The differential amplifier presented in this paper is based on the principle of the constant sum of the gate-source voltages, which assures, in a first-order analysis, the linearization of the circuit. The new idea is to cancel the nonlinearities introduced by the second-order effects such as short channel effect, mobility degradation and bulk effect by using a parallel connection of two complementary excited differential stages. The circuit is implemented in 0.35 /spl mu/m CMOS technology on a die area of 20 /spl mu//35 /spl mu/. The SPICE simulation using BSIM3v3 model and based on the mentioned technology parameters validates the estimated theoretical results about the linearity (a linearity error of 0.5% for an extended input range of 1 V).","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2002.1088513","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

The differential amplifier presented in this paper is based on the principle of the constant sum of the gate-source voltages, which assures, in a first-order analysis, the linearization of the circuit. The new idea is to cancel the nonlinearities introduced by the second-order effects such as short channel effect, mobility degradation and bulk effect by using a parallel connection of two complementary excited differential stages. The circuit is implemented in 0.35 /spl mu/m CMOS technology on a die area of 20 /spl mu//35 /spl mu/. The SPICE simulation using BSIM3v3 model and based on the mentioned technology parameters validates the estimated theoretical results about the linearity (a linearity error of 0.5% for an extended input range of 1 V).
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一种不受阈值电压影响的0.35/spl mu/m CMOS线性差分放大器
本文提出的差分放大器是基于门源电压的恒和原理,保证了在一阶分析中电路的线性化。新的思路是利用两个互补的激励微分级并联来消除由短通道效应、迁移率退化和体积效应等二阶效应引入的非线性。电路采用0.35 /spl mu/m CMOS技术,在20 /spl mu//35 /spl mu/的芯片面积上实现。基于BSIM3v3模型和上述技术参数的SPICE仿真验证了线性度的估计理论结果(扩展输入范围为1 V时线性度误差为0.5%)。
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