Investigation on Polarization and Trapping Dominated Reliability for Ferroelectric-HfZrOx Ge FinFET Inverters

Abstract

In this work, we report ferroelectric HfZrOx (FE-HZO) Ge FinFET inverters fabricated by the low-damage neutral beam etching (NBE) technology. A remarkable voltage gain over 50 V/V is achieved. Cyclic operation of the inverters were performed to investigate the reliability of the devices. The distinct positive and negative shifts of voltage transfer curves are found owing to trap and polarization dominated mechanism, respectively. The findings of this work is conducive to better understanding of operation for ferroelectric-based Ge CMOS.