Memristor models for synapse component

2021 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS) Pub Date : 2021-06-07 DOI:10.1109/DTS52014.2021.9497940

Mouna Elhamdaoui, Khaoula Mbarek, Faten Ouaja Rziga, K. Besbes

{"title":"Memristor models for synapse component","authors":"Mouna Elhamdaoui, Khaoula Mbarek, Faten Ouaja Rziga, K. Besbes","doi":"10.1109/DTS52014.2021.9497940","DOIUrl":null,"url":null,"abstract":"The memristor, the fourth passive circuit element, has exhibited resistance switching mechanism, which can be used in several applications such as nonvolatile memory, digital logic circuits, and neuromorphic systems. The switching mechanism in a Ta2O5-RRAM device is achieved by conductive filament (CF) modulation that provides a suitable analog switching for the electronic synapses. In this paper, we analyze and discuss four different memristor models to identify which of them can achieve sufficient accuracy compared to the physical Ta2O5-RRAM device, in order to be implemented as a synapse. These examined models are the linear ion drift (HP) model, the Voltage Threshold Adaptive Memristor (VTEAM) model, the Memdiode model and the Enhanced Generalized Memristor (EGM) model. Thus, we present the simulation results of each model and we compare its switching characteristics with the experimental characteristics. This study allows us to select the most appropriate memristor model for emulating the synaptic functions.","PeriodicalId":158426,"journal":{"name":"2021 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DTS52014.2021.9497940","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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Abstract

The memristor, the fourth passive circuit element, has exhibited resistance switching mechanism, which can be used in several applications such as nonvolatile memory, digital logic circuits, and neuromorphic systems. The switching mechanism in a Ta2O5-RRAM device is achieved by conductive filament (CF) modulation that provides a suitable analog switching for the electronic synapses. In this paper, we analyze and discuss four different memristor models to identify which of them can achieve sufficient accuracy compared to the physical Ta2O5-RRAM device, in order to be implemented as a synapse. These examined models are the linear ion drift (HP) model, the Voltage Threshold Adaptive Memristor (VTEAM) model, the Memdiode model and the Enhanced Generalized Memristor (EGM) model. Thus, we present the simulation results of each model and we compare its switching characteristics with the experimental characteristics. This study allows us to select the most appropriate memristor model for emulating the synaptic functions.

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突触组件的忆阻器模型

忆阻器是第四种无源电路元件，具有电阻开关机制，可用于非易失性存储器、数字逻辑电路和神经形态系统等多种应用。Ta2O5-RRAM器件中的开关机制是通过导电灯丝(CF)调制实现的，该调制为电子突触提供了合适的模拟开关。在本文中，我们分析和讨论了四种不同的忆阻器模型，以确定与物理Ta2O5-RRAM器件相比，哪一种模型可以达到足够的精度，以便作为突触实现。这些模型是线性离子漂移(HP)模型，电压阈值自适应忆阻器(VTEAM)模型，Memdiode模型和增强型广义忆阻器(EGM)模型。因此，我们给出了每个模型的仿真结果，并将其开关特性与实验特性进行了比较。本研究为我们选择最合适的忆阻器模型来模拟突触功能提供了依据。

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2021 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS)

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